18400745. FRONT END OF LINE INTERCONNECT STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)

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FRONT END OF LINE INTERCONNECT STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS

Organization Name

Micron Technology, Inc.

Inventor(s)

Kyle K. Kirby of Eagle ID (US)

Kunal R. Parekh of Boise ID (US)

FRONT END OF LINE INTERCONNECT STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18400745 titled 'FRONT END OF LINE INTERCONNECT STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS

Simplified Explanation

The patent application describes systems and methods for a semiconductor device with a front-end-of-line interconnect structure. This structure includes a dielectric material, a conducting material, and an interconnect structure that allows for electrical connection.

  • The semiconductor device has a dielectric material on the front side of a semiconductor substrate, with a conducting material on top.
  • The conducting material includes a line portion and an interconnect structure that is electrically coupled to the line portion.
  • The interconnect structure is separated from the substrate by the dielectric material and has a contact surface on the backside.
  • The device also includes a semiconductor die, an insulating material encasing the die, and an opening for electrical connection through the contact surface.

Key Features and Innovation

  • Front-end-of-line interconnect structure for semiconductor devices.
  • Dielectric material separating conducting material from the substrate.
  • Interconnect structure with a contact surface for electrical connection.
  • Insulating material encasing the semiconductor die.

Potential Applications

The technology can be applied in the semiconductor industry for the development of advanced integrated circuits and electronic devices.

Problems Solved

  • Improved electrical connectivity in semiconductor devices.
  • Enhanced performance and reliability of integrated circuits.
  • Efficient use of space on semiconductor substrates.

Benefits

  • Enhanced electrical performance.
  • Increased reliability of semiconductor devices.
  • Space-saving design for integrated circuits.

Commercial Applications

Front-End-of-Line Interconnect Structures for Semiconductor Devices

This technology can be utilized in the production of high-performance integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices. The efficient interconnect structure improves the overall performance and reliability of these devices, making them more competitive in the market.

Prior Art

Information on prior art related to this technology is not provided in the abstract.

Frequently Updated Research

There is no information on frequently updated research relevant to this technology.

Questions about Semiconductor Device Front-End-of-Line Interconnect Structure

Question 1

How does the dielectric material contribute to the functionality of the front-end-of-line interconnect structure?

The dielectric material in the front-end-of-line interconnect structure serves to insulate the conducting material from the semiconductor substrate, preventing electrical interference and ensuring proper functionality.

Question 2

What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?

Implementing this technology in large-scale semiconductor manufacturing processes may face challenges related to scalability, cost-effectiveness, and compatibility with existing fabrication techniques. Manufacturers would need to address these issues to fully realize the benefits of the front-end-of-line interconnect structure.


Original Abstract Submitted

Systems and methods for a semiconductor device having a front-end-of-line interconnect structure are provided. The semiconductor device may include a dielectric material having a backside formed on a front side of a semiconductor or silicon substrate material and a front side, and a conducting material on the front side of the dielectric material. The conducting material may have a line portion and an interconnect structure electrically coupled to the line portion and separated from the front side of the substrate material by the dielectric material. The interconnect structure has a backside defining a contact surface. The semiconductor device may further include a semiconductor die proximate the front side of the dielectric material, an insulating material encasing at least a portion of the semiconductor die, and an opening through which the active contact surface at the backside of the interconnect structure is exposed for electrical connection.

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