18400697. HYBRID BONDING WITH SONIC ENERGY simplified abstract (ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.)
Contents
HYBRID BONDING WITH SONIC ENERGY
Organization Name
ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Inventor(s)
Pawel Mrozek of San Jose CA (US)
Gaius Gillman Fountain, Jr. of Youngsville NC (US)
HYBRID BONDING WITH SONIC ENERGY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18400697 titled 'HYBRID BONDING WITH SONIC ENERGY
The abstract describes a method of forming direct metal bonds between two devices by heating a workpiece and directing sonic energy towards it.
- Heating a workpiece to a temperature between 40°C and 150°C
- Directing sonic energy towards the heated workpiece
- Bonding the first device and the second device through a dielectric material interface
Potential Applications: - Electronics manufacturing - Microelectronics assembly - Semiconductor industry
Problems Solved: - Facilitates direct metal bonding between devices - Enables efficient and reliable bonding process - Reduces the need for additional bonding materials
Benefits: - Improved bond strength - Enhanced device performance - Cost-effective manufacturing process
Commercial Applications: Title: "Innovative Direct Metal Bonding Technology for Electronics Manufacturing" This technology can be utilized in the production of various electronic devices, such as smartphones, tablets, and computers, leading to faster production times and higher quality products.
Questions about Direct Metal Bonding Technology: 1. How does the temperature range affect the bonding process? - The temperature range is critical for ensuring proper bonding without damaging the devices. 2. What are the advantages of using sonic energy for bonding? - Sonic energy helps to create strong bonds between the devices without the need for additional materials.
Original Abstract Submitted
A method of forming direct metal bonds between a first device and a second device is provided. The method may include heating a workpiece to a temperature between 40 C and 150 C, and directing sonic energy towards the heated workpiece. Here, the workpiece may include the first device and the second device directly bonded to the first device through a dielectric material interface.
