18400436. PHOTODETECTION ELEMENT AND LIDAR DEVICE simplified abstract (DENSO CORPORATION)
Contents
PHOTODETECTION ELEMENT AND LIDAR DEVICE
Organization Name
Inventor(s)
Shunsuke Kimura of Kariya-city (JP)
PHOTODETECTION ELEMENT AND LIDAR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18400436 titled 'PHOTODETECTION ELEMENT AND LIDAR DEVICE
The photodetection element described in the patent application consists of various regions and electrodes that work together to detect light and generate carriers within a semiconductor substrate.
- Pixel region internally generates an electron and a hole in response to incident light.
- Pixel neighboring region, adjacent to the pixel region, also generates carriers in response to light.
- First and second absorption regions absorb carriers generated in the neighboring region.
- First and second discharge electrodes discharge the carriers absorbed in the absorption regions.
Key Features and Innovation: - The element efficiently detects light and generates carriers for further processing. - The design allows for precise control and manipulation of carriers within the substrate.
Potential Applications: - Photodetection in imaging sensors. - Light sensing in electronic devices. - Optical communication systems.
Problems Solved: - Efficient light detection and carrier generation. - Precise control of carriers for various applications.
Benefits: - Improved sensitivity to light. - Enhanced performance in light detection applications. - Greater flexibility in carrier manipulation.
Commercial Applications: Title: Advanced Photodetection Element for Enhanced Light Sensing This technology can be utilized in: - Camera sensors for improved image quality. - Light sensors in smartphones and other electronic devices. - Optical communication systems for faster data transmission.
Prior Art: Further research can be conducted in the field of semiconductor photodetection elements to explore similar technologies and advancements.
Frequently Updated Research: Stay updated on advancements in semiconductor photodetection technology to enhance the performance and applications of this element.
Questions about Photodetection Elements: 1. How does the design of this photodetection element compare to traditional photodetectors? This photodetection element offers improved efficiency and control over carrier generation compared to traditional photodetectors.
2. What potential advancements can be expected in the field of photodetection elements in the near future? Research in semiconductor technology is likely to lead to even more sensitive and efficient photodetection elements in the future.
Original Abstract Submitted
A photodetection element includes a pixel region, a first absorption region, a first discharge electrode, a pixel neighboring region, a second absorption region, and a second discharge electrode. The pixel region is formed in a semiconductor substrate and internally generates an electron and a hole in accordance with the incident light. The pixel neighboring region is formed so as to be adjacent to the pixel region and internally generates an electron and a hole in accordance with the incident light. The second absorption region is formed in the pixel neighboring region and absorbs, of either of the electron and the hole generated in the pixel neighboring region, the carrier equal to a first discharge carrier as a second discharge carrier. The second discharge electrode is formed on the semiconductor substrate and discharges, from the second absorption region, the second discharge carrier absorbed in the second absorption region.
