18399990. SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)

SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE

Organization Name

SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor(s)

Shunpei Yamazaki of Tokyo (JP)

Yuichi Sato of Isehara (JP)

Hitoshi Nakayama of Atsugi (JP)

SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18399990 titled 'SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes multiple layers of insulators and conductors, with varying conductivities and positions within the device. Here are some key points to explain the patent/innovation:

• The device consists of multiple insulator and conductor layers stacked on top of each other.
• The conductors are positioned in openings within the insulator layers.
• The conductivity of the oxide layers varies, with the third oxide having higher conductivity than the second oxide.
• The second conductor is in contact with the first conductor, and overlaps with the fifth oxide.
• The fifth oxide is in contact with the side surfaces of the third and fourth oxides.

1. 1. 1. Potential Applications

- This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in integrated circuits, microprocessors, and other electronic components.

1. 1. 1. Problems Solved

- This technology helps in improving the performance and efficiency of semiconductor devices. - It allows for better control of electrical conductivity within the device.

1. 1. 1. Benefits

- Enhanced conductivity control leads to improved overall device performance. - The layered structure provides a compact and efficient design for semiconductor devices.

1. 1. 1. Potential Commercial Applications
         1. Optimizing Semiconductor Device Performance for Electronic Applications

1. 1. 1. Possible Prior Art

There may be prior art related to the use of multiple insulator and conductor layers in semiconductor devices, but specific examples are not provided in the abstract.

1. 1. 1. 1. Unanswered Questions
         2. How does the conductivity of the oxide layers impact the overall performance of the semiconductor device?

The abstract mentions that the conductivity of the third oxide is higher than the second oxide, but it does not elaborate on the specific effects of this difference on the device's functionality.

1. 1. 1. 1. What specific electronic applications could benefit the most from this technology?

While the abstract mentions potential applications in integrated circuits and microprocessors, it does not provide detailed examples of how this technology could be utilized in specific electronic devices or systems.

Original Abstract Submitted

A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.