18398957. SEMICONDUCTOR LIGHT EMITTING DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SEMICONDUCTOR LIGHT EMITTING DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR LIGHT EMITTING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18398957 titled 'SEMICONDUCTOR LIGHT EMITTING DEVICE
The semiconductor light emitting device described in the patent application consists of a light emitting structure with a first semiconductor layer, a second semiconductor layer, and an active layer that emits light in the range of 620 nm to 750 nm.
- The device includes a first electrode connected to the first semiconductor layer and a second electrode connected to the second semiconductor layer.
- A capping layer with a specific refractive index is placed on top of the light emitting structure.
- An encapsulation layer with a lower refractive index than the capping layer covers the entire structure.
Potential Applications: - This technology can be used in LED lighting applications. - It can be utilized in display panels for electronic devices. - Medical devices that require precise light emission could benefit from this technology.
Problems Solved: - Provides a more efficient and precise way of emitting light in a specific wavelength range. - Enhances the overall performance and durability of semiconductor light emitting devices.
Benefits: - Improved light emission efficiency. - Enhanced durability and longevity of the device. - Precise control over the emitted light wavelength.
Commercial Applications: Title: Advanced Semiconductor Light Emitting Device for Enhanced Lighting Solutions This technology can be commercialized for: - LED lighting industry - Display panel manufacturers - Medical device companies
Questions about Semiconductor Light Emitting Devices: 1. How does the refractive index of the capping layer affect the performance of the device?
The refractive index of the capping layer influences the light extraction efficiency and overall performance of the device.
2. What are the key differences between the first and second semiconductor layers in terms of conductivity types and their impact on light emission?
The first and second semiconductor layers have different conductivity types, which play a crucial role in controlling the flow of electrons and holes for efficient light emission.
Original Abstract Submitted
A semiconductor light emitting device, including a light emitting structure comprising a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type which is different from the first conductivity type, and an active layer between the first semiconductor layer and the second semiconductor layer and configured to emit light having a wavelength in a range of about 620 nm to about 750 nm; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a capping layer on a top surface of the light emitting structure and having a first refractive index in a range of about 2.05 to about 2.58; and an encapsulation layer on the capping layer and on the light emitting structure, and having a second refractive index which is less than the first refractive index.
