18398420. DISPLAY DEVICE simplified abstract (LG Display Co., Ltd.)
Contents
DISPLAY DEVICE
Organization Name
Inventor(s)
DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18398420 titled 'DISPLAY DEVICE
Simplified Explanation: The display device described in the patent application includes various layers to improve the characteristics and reliability of an oxide thin film transistor by preventing the introduction of hydrogen into the transistor.
- The substrate is divided into an active area and a non-active area, which includes a gate-in-panel (GIP) area.
- A planarization layer covers the substrate and extends to the non-active area.
- A bank is placed over the planarization layer and extends to the non-active area.
- An encapsulation layer is then added over the bank.
- A hydrogen absorption layer is positioned between the bank and the planarization layer to cover the GIP area.
Key Features and Innovation:
- Substrate divided into active and non-active areas.
- Planarization layer for coverage.
- Bank layer for additional protection.
- Encapsulation layer for overall sealing.
- Hydrogen absorption layer to prevent hydrogen introduction.
Potential Applications: This technology can be applied in the manufacturing of display devices, particularly in improving the performance and reliability of oxide thin film transistors.
Problems Solved: The technology addresses the issue of hydrogen introduction into oxide thin film transistors, which can impact their characteristics and reliability.
Benefits:
- Improved characteristics and reliability of oxide thin film transistors.
- Prevention of hydrogen-related issues.
- Enhanced performance of display devices.
Commercial Applications: The technology can be utilized in the production of high-quality display devices for various consumer electronics, such as smartphones, tablets, and televisions.
Prior Art: Further research can be conducted on similar technologies in the field of display devices and thin film transistors to understand the existing knowledge and advancements.
Frequently Updated Research: Stay updated on advancements in display technology, thin film transistors, and materials science to enhance the understanding and potential applications of this technology.
Questions about Display Devices: 1. How does the technology prevent hydrogen introduction into oxide thin film transistors? 2. What are the key layers involved in improving the characteristics of the oxide thin film transistor?
Original Abstract Submitted
A display device according to an exemplary aspect of the present disclosure includes a substrate divided into an active area and a non-active area including a gate-in-panel (GIP) area, a planarization layer disposed over the substrate and extending to the non-active area, a bank disposed over the planarization layer and extending to the non-active area, an encapsulation layer disposed over the bank and a hydrogen absorption layer disposed between the bank and the planarization layer to cover the GIP area, so that it is possible to improve characteristics and reliability of an oxide thin film transistor by blocking introduction of hydrogen into the oxide thin film transistor of a GIP circuit.
