18398146. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
Contents
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Atsushi Takahashi of Kurokawa-gun (JP)
ETCHING METHOD AND PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18398146 titled 'ETCHING METHOD AND PLASMA PROCESSING APPARATUS
- Simplified Explanation:
The patent application describes a method for etching a silicon-containing film by adsorbing a silylating agent with a C-F bond onto the film and then etching it.
- Key Features and Innovation:
- Adsorbing a silylating agent with a C-F bond onto a silicon-containing film - Etching the film to achieve desired results
- Potential Applications:
- Semiconductor manufacturing - Microelectronics industry - Thin film technology
- Problems Solved:
- Improving etching processes for silicon-containing films - Enhancing precision and control in etching procedures
- Benefits:
- Increased efficiency in etching processes - Enhanced quality of etched silicon-containing films - Cost-effective method for semiconductor manufacturing
- Commercial Applications:
- This technology can be used in semiconductor fabrication facilities to improve etching processes and enhance the quality of silicon-containing films.
- Questions about the Technology:
1. How does the use of a silylating agent with a C-F bond improve the etching process? 2. What specific benefits does this method offer compared to traditional etching techniques?
- Frequently Updated Research:
- Stay updated on advancements in etching methods for silicon-containing films to ensure the most efficient and effective processes are being utilized.
Original Abstract Submitted
An etching method includes (a) adsorbing a silylating agent having a C—F bond to at least a portion of an etching target film including a silicon-containing film; and (b) etching the etching target film.
