18397389. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Anthony Dongick Lee of Suwon-si (KR)
Min Chan Gwak of Suwon-si (KR)
Young Woo Kim of Suwon-si (KR)
Sang Cheol Na of Suwon-si (KR)
Kyoung Woo Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18397389 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes various components such as an active pattern, field insulating film, gate structure, source/drain area, through-contact, buried pattern, backside wiring structure, and heat-dissipating structure.
- The active pattern is located on the first surface of the substrate and extends in a first direction.
- The gate structure is positioned on the active pattern and field insulating film, extending in a second direction intersecting the first direction.
- The source/drain area is on a side surface of the gate structure and contacts the active pattern.
- The through-contact extends in a third direction perpendicular to the first and second directions, passing through the field insulating film.
- The buried pattern in the substrate connects to the through-contact.
- The backside wiring structure on the second surface of the substrate is electrically connected to the buried pattern.
- The heat-dissipating structure in the substrate fills a trench extending from the second surface into the substrate.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can improve the performance and efficiency of integrated circuits in electronic devices.
Problems Solved: - Enhances heat dissipation in semiconductor devices, improving overall performance and reliability. - Provides a more compact and efficient design for semiconductor components.
Benefits: - Improved heat dissipation capabilities lead to better performance and longevity of semiconductor devices. - Enhanced integration and efficiency in electronic circuits.
Commercial Applications: - This technology can be applied in the production of smartphones, computers, tablets, and other electronic devices requiring high-performance semiconductor components.
Questions about the technology: 1. How does the heat-dissipating structure in the substrate improve the performance of the semiconductor device? 2. What are the specific advantages of the through-contact design in this semiconductor device?
Original Abstract Submitted
A semiconductor device includes an active pattern on a first surface of a substrate and extending in a first direction, a field insulating film on the first surface and a side surface of the active pattern, a gate structure on the active pattern and field insulating film and extending in a second direction intersecting the first direction, a source/drain area on a side surface of the gate structure and contacting the active pattern, and a through-contact extending in a third direction perpendicular to the first and second directions and extending through the field insulating film. The device further includes a buried pattern in the substrate contacting the through-contact, a backside wiring structure on a second surface of the substrate and electrically connected to the buried pattern, and a heat-dissipating structure in the substrate adjacent to the buried pattern. The heat-dissipating structure fills a trench extending from the second surface into the substrate.
