18397224. SEMICONDUCTOR DEVICE simplified abstract (Japan Display Inc.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Masumi Nishimura of Tokyo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18397224 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application utilizes a gallium nitride layer on an amorphous glass substrate, with an oriented insulating layer and a first gallium nitride layer of a specific conductivity type.
- The device includes an amorphous glass substrate.
- An oriented insulating layer with crystal orientation is arranged on the substrate.
- A first gallium nitride layer, of a specific conductivity type, is in contact with the oriented insulating layer.
- A gate electrode is positioned opposite to the first gallium nitride layer.
- A gate insulating layer separates the first gallium nitride layer and the gate electrode.
- The oriented insulating layer may have 6-fold rotational symmetry.
Potential Applications: - Power electronics - LED lighting - High-frequency communication devices
Problems Solved: - Improved performance and efficiency in semiconductor devices - Enhanced durability and stability
Benefits: - Higher conductivity - Better thermal management - Increased device lifespan
Commercial Applications: Title: Gallium Nitride Semiconductor Devices for Advanced Electronics This technology can be applied in various industries such as telecommunications, automotive, and consumer electronics, leading to more efficient and reliable electronic devices.
Questions about Gallium Nitride Semiconductor Devices: 1. How does the crystal orientation of the insulating layer impact the performance of the device?
The crystal orientation of the insulating layer can affect the overall conductivity and efficiency of the semiconductor device.
2. What are the advantages of using a gallium nitride layer in semiconductor devices?
Gallium nitride offers higher electron mobility, allowing for faster switching speeds and better overall performance.
Original Abstract Submitted
A semiconductor device using a gallium nitride layer has an amorphous glass substrate, an oriented insulating layer arranged on the amorphous glass substrate and having a crystal orientation, a first gallium nitride layer arranged on the oriented insulating layer and in contact with the oriented insulating layer, the first gallium nitride layer being a first conductivity type, a gate electrode opposed to the first gallium nitride layer, and a gate insulating layer between the first gallium nitride layer and the gate electrode. The oriented insulating layer may have a plane with 6-fold rotational symmetry.
