18396258. ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE
Organization Name
Inventor(s)
Hyangsook Lee of Suwon-si (KR)
ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18396258 titled 'ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE
Simplified Explanation: The patent application describes an electronic device with a ferroelectric layer that includes two oxide layers, one with a first component and the other with hafnium and a second component.
- The electronic device includes a conductive material layer.
- The ferroelectric layer covers the conductive material layer.
- The ferroelectric layer consists of a first oxide layer with a first component.
- Additionally, the ferroelectric layer includes a second oxide layer with hafnium and a second component.
- The second oxide layer has a thickness that is twice or more than the thickness of the first oxide layer.
Potential Applications: 1. Memory storage devices 2. Sensors 3. Energy storage devices
Problems Solved: 1. Enhancing data retention in memory devices 2. Improving sensitivity in sensors 3. Increasing energy storage capacity
Benefits: 1. Improved performance in electronic devices 2. Enhanced reliability 3. Increased efficiency
Commercial Applications: The technology could be applied in the development of advanced memory storage devices, high-performance sensors, and efficient energy storage solutions, catering to various industries such as electronics, telecommunications, and renewable energy.
Questions about the Technology: 1. How does the thickness of the second oxide layer impact the performance of the electronic device? 2. What are the specific components used in the first and second oxide layers, and how do they contribute to the functionality of the device?
Original Abstract Submitted
An electronic device and an electronic apparatus including the electronic device are provided. The electronic device includes a conductive material layer, and a ferroelectric layer covering the conductive material layer. The ferroelectric layer includes a first oxide layer including a first component, and a second oxide layer including hafnium and a second component and having a thickness that is twice or more than a thickness of the first oxide layer.