18395879. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
Contents
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Atsuki Hashimoto of Hwaseong-si (KR)
Sho Saitoh of Kurokawa-gun (JP)
Yoshimitsu Kon of Kurokawa-gun (JP)
ETCHING METHOD AND PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18395879 titled 'ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Simplified Explanation: The patent application describes a method for etching a substrate with two regions, one containing a first material and the other containing a second material with silicon. A metal-containing deposition is formed on the first region using a first plasma, followed by etching the second region using a second plasma.
- The method involves providing a substrate with two distinct regions, one with a first material and an opening, and the other with a second material containing silicon.
- A metal-containing deposition is formed on the first region using a first plasma generated from a process gas containing halogen, metal, and carbon or hydrogen.
- The second region is then etched through the opening using a second plasma generated from a different process gas than the first plasma.
Potential Applications: 1. Semiconductor manufacturing 2. Microelectronics fabrication 3. Nanotechnology research
Problems Solved: 1. Precise etching of different materials in a substrate 2. Improving the efficiency of metal depositions 3. Enhancing the quality of etched structures
Benefits: 1. Enhanced control over etching processes 2. Increased precision in material removal 3. Improved substrate quality and integrity
Commercial Applications: Advanced semiconductor manufacturing processes for high-tech industries such as electronics, telecommunications, and aerospace.
Questions about etching method: 1. How does the use of different plasmas improve the etching process? 2. What are the advantages of using a metal-containing deposition in this method?
Frequently Updated Research: Ongoing research in plasma technology and material science may lead to further advancements in etching methods for substrates with multiple regions.
Original Abstract Submitted
An etching method includes (a) providing a substrate including a first region and a second region below the first region, the first region containing a first material and including an opening, the second region containing a second material different from the first material, the second material containing silicon; (b) forming a metal-containing deposition on the first region by using first plasma generated from a first process gas containing halogen, metal, and at least one of carbon or hydrogen; and (c) after (b), etching the second region via the opening by using second plasma generated from a second process gas different from the first process gas.
