18395804. DISPLAY DEVICE simplified abstract (LG Display Co., Ltd.)
Contents
DISPLAY DEVICE
Organization Name
Inventor(s)
DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18395804 titled 'DISPLAY DEVICE
Simplified Explanation: The patent application describes a display device with improved properties and reliability of an oxide thin-film transistor by preventing the introduction of hydrogen into the transistor.
- The device includes a substrate divided into display and non-display areas.
- A planarization layer is placed over the substrate, followed by a bank and a dam in the non-display area.
- A hydrogen adsorption layer covers the upper portion and side surface of the dam.
- An encapsulation layer is positioned over the planarization layer and an organic film inside the dam.
Key Features and Innovation:
- Improved properties and reliability of oxide thin-film transistors in a GIP circuit.
- Prevention of hydrogen introduction into the transistor.
- Use of a hydrogen adsorption layer and encapsulation layer to achieve this.
Potential Applications: The technology can be applied in various display devices, such as smartphones, tablets, and televisions.
Problems Solved: The technology addresses the issue of hydrogen introduction into oxide thin-film transistors, which can affect their properties and reliability.
Benefits:
- Enhanced properties and reliability of oxide thin-film transistors.
- Improved performance of display devices.
- Extended lifespan of the devices.
Commercial Applications: This technology can be utilized in the manufacturing of consumer electronics, leading to more durable and reliable display devices in the market.
Prior Art: Readers can explore prior research on hydrogen adsorption layers and encapsulation techniques in display devices to understand the background of this technology.
Frequently Updated Research: Stay updated on advancements in hydrogen adsorption technology and encapsulation methods for display devices to enhance the performance and reliability of oxide thin-film transistors.
Questions about Display Devices: 1. How does the hydrogen adsorption layer prevent hydrogen from entering the oxide thin-film transistor? 2. What are the potential long-term effects of blocking hydrogen introduction in display devices?
Original Abstract Submitted
A display device includes a substrate divided into a display area and a non-display area, a planarization layer disposed over the substrate, a bank disposed over the planarization layer, a dam disposed over the substrate in the non-display area, a hydrogen adsorption layer configured to cover an upper portion and a side surface of the dam, and an encapsulation layer disposed over the planarization layer and an upper portion of the bank and having an organic film positioned inside the dam, thereby improving properties and reliability of an oxide thin-film transistor of a GIP circuit by blocking introduction of hydrogen into the oxide thin-film transistor.
