18395788. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
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ETCHING METHOD AND PLASMA PROCESSING APPARATUS
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ETCHING METHOD AND PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18395788 titled 'ETCHING METHOD AND PLASMA PROCESSING APPARATUS
The abstract describes a method for etching a substrate to form a recess and then depositing a metal-containing film on the side wall of the recess using plasma generated from a metal-containing gas.
- Provides a substrate with an etching target film and a mask on the film within a chamber.
- Etches the target film to create a recess under controlled pressure and temperature conditions.
- Forms a metal-containing film on the side wall of the recess using plasma from a metal-containing gas under different pressure and temperature conditions.
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Nanotechnology research
Problems Solved: - Precise etching of substrates - Controlled deposition of metal-containing films - Enhancing device performance through tailored material properties
Benefits: - Improved precision in etching processes - Enhanced control over material deposition - Increased efficiency in device fabrication
Commercial Applications: - Advanced semiconductor fabrication - Production of high-performance electronic devices - Research and development in nanoscale technologies
Questions about the technology: 1. How does the method ensure precise control over the deposition of the metal-containing film? 2. What are the key advantages of using plasma generated from a metal-containing gas in this process?
Frequently Updated Research: - Ongoing studies on optimizing the etching and deposition parameters for enhanced device performance.
Original Abstract Submitted
An etching method includes (a) providing a substrate having an etching target film and a mask on the etching target film, on a substrate support within a chamber; (b) etching the etching target film to form a recess under a condition that a pressure within the chamber is controlled to a first pressure, and a temperature of the substrate support is controlled to a first temperature; and (c) forming a metal-containing film on a portion of a side wall of the recess by using plasma generated from a processing gas containing a metal-containing gas, under a condition that the pressure within the chamber is controlled to a second pressure higher than the first pressure, and the temperature of the substrate support is controlled to a second temperature equal to or less than the first temperature.
