18394884. SEMICONDUCTOR DEVICE INCLUDING CAPACITOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE INCLUDING CAPACITOR
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING CAPACITOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18394884 titled 'SEMICONDUCTOR DEVICE INCLUDING CAPACITOR
The semiconductor device described in the abstract includes a structure with a conductive region and a capacitor connected to the conductive region. The capacitor consists of a first electrode connected to the conductive region, a second electrode on the first electrode, and a dielectric layer between the two electrodes.
- The first electrode or the second electrode contains a first material layer with a first crystalline region and a second crystalline region, along with a second material region between them, and a second material layer on top.
- The first material layer is positioned between the second material layer and the dielectric layer, with the material of the first region differing from the material of the second region.
Potential Applications: - This technology could be used in various semiconductor devices to enhance their performance and efficiency. - It may find applications in electronic circuits, memory devices, and other electronic systems.
Problems Solved: - This innovation addresses the need for improved semiconductor devices with enhanced capacitor structures. - It tackles the challenge of optimizing the performance of electronic components in various applications.
Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced functionality and reliability of electronic systems. - Potential cost savings in the production of electronic components.
Commercial Applications: Title: Advanced Semiconductor Device with Enhanced Capacitor Structure This technology has significant commercial potential in the semiconductor industry, particularly in the development of high-performance electronic devices. It could be utilized in the production of advanced consumer electronics, communication systems, and industrial equipment, among other applications.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching advancements in semiconductor device structures, capacitor designs, and materials used in electronic components.
Frequently Updated Research: Researchers and industry experts are continuously exploring ways to further enhance the performance and efficiency of semiconductor devices through innovative capacitor structures and materials. Stay updated on the latest developments in this field to leverage the full potential of this technology.
Questions about Semiconductor Device with Enhanced Capacitor Structure: 1. How does the innovative capacitor structure in this semiconductor device improve its overall performance? - The innovative capacitor structure enhances the device's performance by optimizing the electrical properties and efficiency of the capacitor, leading to improved functionality and reliability.
2. What potential applications can benefit the most from the advanced features of this semiconductor device? - Various applications in the semiconductor industry, such as electronic circuits, memory devices, and communication systems, can greatly benefit from the enhanced features of this semiconductor device.
Original Abstract Submitted
A semiconductor device includes a structure including a conductive region, and a capacitor electrically connected to the conductive region of the structure. The capacitor includes a first electrode electrically connected to the conductive region, a second electrode on the first electrode, and a dielectric layer between the first electrode and the second electrode. At least one of the first electrode and the second electrode includes a first material layer including a first material region including a first crystalline region and a second crystalline region different from the first crystalline region, and a second material region between the first crystalline region and the second crystalline region, and a second material layer on the first material layer. At least a portion of the first material layer is between the second material layer and the dielectric layer. A material of the first material region is different from a material of the second material region.
