18394644. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18394644 titled 'INTEGRATED CIRCUIT DEVICE
The abstract describes an integrated circuit device with a unique capacitor structure that includes alternating layers of ferroelectric and anti-ferroelectric materials, with a gradual variation in internal defect dipoles.
- The integrated circuit device includes a transistor on a substrate and a capacitor structure connected to the transistor.
- The capacitor structure consists of a first electrode, a dielectric layer structure, and a second electrode.
- The dielectric layer structure is made up of alternating layers of ferroelectric and anti-ferroelectric materials.
- The distribution proportion of internal defect dipoles varies gradually in the thickness direction of the dielectric layer structure.
Potential Applications: - Memory storage devices - Sensor technology - High-frequency communication systems
Problems Solved: - Improved performance and reliability of integrated circuits - Enhanced data retention in memory devices
Benefits: - Increased data storage capacity - Enhanced signal processing capabilities - Improved overall efficiency of electronic devices
Commercial Applications: Title: "Innovative Capacitor Structure for Enhanced Integrated Circuits" This technology could be utilized in the development of advanced electronic devices such as smartphones, tablets, and computers, improving their performance and reliability in various applications.
Prior Art: Researchers can explore prior patents related to ferroelectric and anti-ferroelectric materials in capacitor structures to understand the evolution of this technology.
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the performance of capacitor structures in integrated circuits.
Questions about the technology: 1. How does the gradual variation of internal defect dipoles impact the overall performance of the capacitor structure? 2. What are the potential challenges in scaling this technology for mass production in electronic devices?
Original Abstract Submitted
An integrated circuit device may include a transistor on a substrate and a capacitor structure electrically connected to the transistor. The capacitor structure may include a first electrode, a dielectric layer structure on the first electrode, and a second electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of first dielectric layers and a plurality of second dielectric layers that are alternately stacked. The plurality of first dielectric layers may include a ferroelectric material, and the plurality of second dielectric layers may include an anti-ferroelectric material. The distribution proportion of internal defect dipoles gradually may vary in a thickness direction of the dielectric layer structure.
