18394347. VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE AND METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE simplified abstract (Robert Bosch GmbH)
Contents
- 1 VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE AND METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE AND METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Vertical Field-Effect Transistor Structure
- 1.13 Original Abstract Submitted
VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE AND METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE
Organization Name
Inventor(s)
Daniel Krebs of Aufhausen (DE)
VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE AND METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18394347 titled 'VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE AND METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE
Simplified Explanation
The patent application describes a vertical field-effect transistor structure with specific trench configurations and doping profiles to improve performance.
Key Features and Innovation
- Semiconductor body with drift zone and multiple trenches of varying depths.
- Shielding regions with different dopings to enhance transistor operation.
- Gate electrodes insulated from trench walls for proper functionality.
- Second trenches exclusively doped with drift zone material for optimized performance.
Potential Applications
This technology can be applied in power electronics, high-voltage applications, and integrated circuits requiring efficient vertical transistors.
Problems Solved
- Enhanced transistor performance and efficiency.
- Improved control over electric fields within the device.
- Reduction of leakage currents and power losses.
Benefits
- Higher efficiency in power conversion.
- Increased reliability and longevity of electronic devices.
- Better control over high voltages in circuits.
Commercial Applications
Vertical field-effect transistors with this innovative structure can be utilized in power supplies, electric vehicles, renewable energy systems, and industrial automation equipment.
Prior Art
Readers interested in prior art related to this technology can explore patents and research papers on vertical field-effect transistors, trench structures, and doping techniques in semiconductor devices.
Frequently Updated Research
Researchers in the field of semiconductor devices and power electronics frequently publish studies on optimizing transistor structures for improved performance. Stay updated on the latest advancements in vertical transistor technology.
Questions about Vertical Field-Effect Transistor Structure
What are the key features of a vertical field-effect transistor structure?
A vertical field-effect transistor structure includes a semiconductor body with multiple trenches of varying depths, shielding regions with different dopings, and gate electrodes insulated from trench walls for optimized performance.
How can this technology benefit power electronics applications?
This technology can improve efficiency, reduce power losses, and enhance control over high voltages in power electronics applications, leading to more reliable and efficient electronic devices.
Original Abstract Submitted
A vertical field-effect transistor structure including a semiconductor body having a drift zone having a first doping of a first doping type, multiple first trenches, and multiple second trenches. The first trenches have at most a first trench depth, and the second trenches have at least a second trench depth. The second trench depth is at least 50 nm longer than the first trench depth. The structure includes a shielding region adjacent to each trench bottom of the first trenches, which has a second doping of a second doping type, and at least one gate electrode in each of the first and second trenches, which is electrically insulated at least from the adjacent trench bottom and trench side wall. Each region adjacent to the trench bottoms of the second trenches has exclusively the first doping of the drift zone and is free from the second doping.
