18392757. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (Mitsubishi Electric Corporation)
Contents
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Toshihiro Imasaka of Tokyo (JP)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18392757 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Simplified Explanation:
This semiconductor device includes a substrate, breakdown voltage holding insulating film, element portion with lower and upper elements, lead-out wire, first electrode pad, second electrode pad, and top layer protective film.
Key Features and Innovation:
- Breakdown voltage holding insulating film and top layer protective film extend beyond the first electrode pad.
- Electrically conductive pad double stack portion on the upper surface of the second electrode pad.
- Top layer protective film covers the peripheral portion of the pad double stack portion.
Potential Applications: This technology can be used in various semiconductor devices, power electronics, and integrated circuits.
Problems Solved: This technology addresses issues related to breakdown voltage, insulation, and protection of electrode pads in semiconductor devices.
Benefits:
- Enhanced breakdown voltage holding capabilities.
- Improved insulation and protection of electrode pads.
- Increased reliability and performance of semiconductor devices.
Commercial Applications: Potential commercial applications include power electronics, automotive electronics, consumer electronics, and telecommunications equipment.
Prior Art: Prior art related to this technology may include patents or research papers on semiconductor device structures, breakdown voltage protection, and electrode pad design.
Frequently Updated Research: Researchers may be exploring advancements in breakdown voltage holding materials, protective film technologies, and electrode pad configurations for semiconductor devices.
Questions about Semiconductor Device Technology: 1. What are the key components of a semiconductor device? 2. How does the breakdown voltage holding insulating film contribute to the performance of the device?
Original Abstract Submitted
A semiconductor device includes: a substrate; a breakdown voltage holding insulating film; an element portion including a lower element and an upper element; a lead-out wire; a first electrode pad; a second electrode pad being one end portion of the upper element; and a top layer protective film covering the upper element so that the second electrode pad is exposed from a second contact hole. The breakdown voltage holding insulating film and the top layer protective film extend to a region outside the first electrode pad in a direction of extension of the lead-out wire. An electrically conductive pad double stack portion is disposed on an upper surface of the second electrode pad. The top layer protective film covers a peripheral portion of the pad double stack portion.
