18390436. ACOUSTIC WAVE DEVICE simplified abstract (Murata Manufacturing Co., Ltd.)
Contents
ACOUSTIC WAVE DEVICE
Organization Name
Murata Manufacturing Co., Ltd.
Inventor(s)
Naoki Oshima of Nagaokakyo-shi (JP)
ACOUSTIC WAVE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18390436 titled 'ACOUSTIC WAVE DEVICE
The abstract describes a resonator in an acoustic wave device that includes various regions with different acoustic wave velocities.
- The resonator includes an IDT electrode and a portion of a piezoelectric substrate.
- It has a middle region, first and second gap regions, first and second edge regions, and first and second intermediate regions.
- The acoustic wave velocity in the intermediate regions is lower than in the middle region and higher than in the edge regions.
Potential Applications: - Acoustic wave devices - Sensor technology - Communication systems
Problems Solved: - Control of acoustic wave propagation - Optimization of resonator performance
Benefits: - Improved efficiency in acoustic wave devices - Enhanced sensor sensitivity - Better communication signal quality
Commercial Applications: Title: "Advanced Acoustic Wave Resonator Technology for Enhanced Sensor Systems" This technology can be used in various industries such as telecommunications, automotive, and healthcare for improved sensor performance and communication systems.
Questions about the technology: 1. How does the different acoustic wave velocities in the resonator regions affect its overall performance?
- The varying velocities help control the propagation of acoustic waves within the resonator, optimizing its functionality.
2. What are the potential challenges in implementing this technology in commercial sensor systems?
- Some challenges may include manufacturing precision components and integrating the technology into existing systems seamlessly.
Original Abstract Submitted
In an acoustic wave device, a resonator including an IDT electrode and a portion of a piezoelectric substrate includes a middle region, a first gap region, a second gap region, a first edge region, a second edge region, a first intermediate region, and a second intermediate region. The first intermediate region is located between the middle region and the first edge region. The second intermediate region is located between the middle region and the second edge region. An acoustic wave velocity in the first intermediate region and in the second intermediate region are lower than an acoustic wave velocity in the middle region and higher than an acoustic wave velocity in the first edge region and an acoustic wave velocity in the second edge region.