18390360. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

Organization Name

SK hynix Inc.

Inventor(s)

Nam Jae Lee of Icheon-si Gyeonggi-do (KR)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18390360 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

Simplified Explanation

The present technology provides a semiconductor device with a stack of insulating patterns and conductive patterns, a channel layer with a first channel portion protruding out of the stack and a second channel portion within the stack, and a conductive line surrounding the first channel portion, which includes metal silicide.

  • The semiconductor device includes a stack of insulating patterns and conductive patterns.
  • The channel layer has a first channel portion protruding out of the stack and a second channel portion within the stack.
  • The first channel portion includes metal silicide.

Potential Applications

The semiconductor device could be used in:

  • Integrated circuits
  • Microprocessors
  • Memory devices

Problems Solved

This technology helps in:

  • Improving performance of semiconductor devices
  • Enhancing conductivity within the device

Benefits

The benefits of this technology include:

  • Increased efficiency
  • Better signal transmission
  • Higher processing speeds

Potential Commercial Applications

The semiconductor device could be applied in:

  • Electronics industry
  • Semiconductor manufacturing sector

Possible Prior Art

Prior art in semiconductor devices with similar structures and functionalities may exist, but specific examples are not provided in this context.

Unanswered Questions

How does the metal silicide in the first channel portion enhance the performance of the semiconductor device?

The metal silicide in the first channel portion is known to improve conductivity, but the exact mechanism of its impact on device performance is not detailed in the abstract.

What specific types of insulating patterns and conductive patterns are used in the stack of the semiconductor device?

The abstract mentions the presence of insulating patterns and conductive patterns in the stack, but the specific materials or designs of these patterns are not specified.


Original Abstract Submitted

The present technology provides a semiconductor device. The semiconductor device includes a stack including insulating patterns and conductive patterns stacked alternately with each other, a channel layer including a first channel portion protruding out of the stack and a second channel portion in the stack, and passing through the stack, and a conductive line surrounding the first channel portion, and the first channel portion includes metal silicide.