18387641. BOTTOM ELECTRODE CONTACT FOR A VERTICAL THREE-DIMENSIONAL MEMORY simplified abstract (Micron Technology, Inc.)

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BOTTOM ELECTRODE CONTACT FOR A VERTICAL THREE-DIMENSIONAL MEMORY

Organization Name

Micron Technology, Inc.

Inventor(s)

Yuichi Yokoyama of Boise ID (US)

Si-Woo Lee of Boise ID (US)

BOTTOM ELECTRODE CONTACT FOR A VERTICAL THREE-DIMENSIONAL MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18387641 titled 'BOTTOM ELECTRODE CONTACT FOR A VERTICAL THREE-DIMENSIONAL MEMORY

Simplified Explanation

The abstract describes systems, methods, and apparatus for vertically stacked memory cells with a bottom electrode contact in a periphery region.

  • Memory cells are vertically stacked with a bottom electrode contact in a periphery region.
  • The bottom electrode contact is electrically coupled to bottom electrodes of capacitors in the periphery region.

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      1. Potential Applications
  • Memory storage devices
  • Computer systems
  • Mobile devices
      1. Problems Solved
  • Efficient memory cell organization
  • Improved memory cell performance
  • Enhanced memory storage capacity
      1. Benefits
  • Increased memory storage density
  • Faster data access speeds
  • Enhanced overall system performance


Original Abstract Submitted

Systems, methods and apparatus are provided for an array of vertically stacked memory cells having a bottom electrode contact for an array of vertically stacked memory cells. The bottom electrode contact is formed in a periphery region. The bottom electrode contact is electrically coupled to a number of bottom electrodes of capacitors that are also formed in the periphery region.

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