18386916. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Seohyeong Jang of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18386916 titled 'SEMICONDUCTOR MEMORY DEVICE
The abstract describes a semiconductor memory device with an active pattern enclosed by a device isolation pattern, and a word line crossing the active pattern and isolation pattern with two gate electrodes of different work functions.
- Simplified Explanation:
This patent application describes a semiconductor memory device with unique gate electrode configurations.
- Key Features and Innovation:
- Active pattern enclosed by device isolation pattern - Word line crossing active pattern and isolation pattern - Two gate electrodes with different work functions
- Potential Applications:
- Memory storage devices - Integrated circuits - Electronic devices requiring high-speed data processing
- Problems Solved:
- Enhanced performance and reliability of semiconductor memory devices - Improved data retention and retrieval speed
- Benefits:
- Increased efficiency in data processing - Higher reliability in memory storage - Improved overall performance of electronic devices
- Commercial Applications:
Title: "Innovative Semiconductor Memory Device for Enhanced Data Processing" This technology can be applied in various commercial sectors such as consumer electronics, telecommunications, and computing industries. It can improve the speed and efficiency of data processing in devices like smartphones, laptops, and servers.
- Prior Art:
Readers can explore prior art related to semiconductor memory devices, gate electrode configurations, and device isolation patterns in semiconductor technology journals, patent databases, and academic research papers.
- Frequently Updated Research:
Stay updated on the latest advancements in semiconductor memory devices, gate electrode technologies, and device isolation patterns by following industry conferences, research publications, and technology forums.
Questions about Semiconductor Memory Devices: 1. How does the unique gate electrode configuration in this semiconductor memory device improve performance? 2. What are the potential challenges in implementing this technology in commercial electronic devices?
Original Abstract Submitted
A semiconductor memory device is provided. The semiconductor memory device includes: an active pattern provided on a substrate and enclosed by a device isolation pattern; and a word line crossing the active pattern and the device isolation pattern in a first direction parallel to a bottom surface of the substrate, and including a first gate electrode and a second gate electrode, which are adjacent to each other in the first direction. A second work function of the second gate electrode is greater than a first work function of the first gate electrode.
