18385945. HOLE-TYPE SADP FOR 2D DRAM CAPACITOR simplified abstract (Applied Materials, Inc.)
Contents
HOLE-TYPE SADP FOR 2D DRAM CAPACITOR
Organization Name
Inventor(s)
Fredrick Fishburn of Aptos CA (US)
HOLE-TYPE SADP FOR 2D DRAM CAPACITOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18385945 titled 'HOLE-TYPE SADP FOR 2D DRAM CAPACITOR
Simplified Explanation: The patent application describes memory devices and methods of forming memory devices. It involves forming a spacer around each of the bit line contact pillars, with the spacers in contact with those of adjacent pillars. A doped layer is then grown on the memory stack, followed by the formation of a bit line that is self-aligned with the active region.
- Key Features and Innovation:
- Formation of spacers around bit line contact pillars - Epitaxial growth of a doped layer on the memory stack - Self-aligned formation of the bit line with the active region
Potential Applications: This technology can be applied in the development of advanced memory devices for various electronic applications, such as data storage, computing systems, and mobile devices.
Problems Solved: The technology addresses the need for improved memory device fabrication processes that enhance performance and reliability by ensuring precise alignment of components.
Benefits: - Enhanced memory device performance - Improved reliability - Simplified fabrication processes
Commercial Applications: Potential commercial applications include the production of high-performance memory devices for consumer electronics, data centers, and other computing applications.
Prior Art: Readers can explore prior art related to memory device fabrication processes, semiconductor manufacturing, and self-aligned structures to gain a deeper understanding of the technology.
Frequently Updated Research: Researchers may find updated studies on semiconductor fabrication techniques, memory device design, and self-aligned structures relevant to this technology.
Questions about Memory Device Fabrication: 1. How does the formation of spacers around bit line contact pillars improve memory device performance? 2. What are the key advantages of self-aligned bit line formation in memory devices?
Original Abstract Submitted
Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where a spacer is formed around each of the bit line contact pillars, the spacer in contact with the spacer of an adjacent bit line contact pillar. A doped layer is then epitaxially grown on the memory stack and bit line is formed on the memory stack. The bit line is self-aligned with the active region.
