18385480. APPARATUS FOR INSPECTING SURFACE OF OBJECT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 APPARATUS FOR INSPECTING SURFACE OF OBJECT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 APPARATUS FOR INSPECTING SURFACE OF OBJECT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Semiconductor Inspection Technology
- 1.13 Original Abstract Submitted
APPARATUS FOR INSPECTING SURFACE OF OBJECT
Organization Name
Inventor(s)
YASUHIRO Hidaka of KANAGAWA (JP)
APPARATUS FOR INSPECTING SURFACE OF OBJECT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18385480 titled 'APPARATUS FOR INSPECTING SURFACE OF OBJECT
Simplified Explanation
The patent application describes a semiconductor inspection method using second-harmonic generation to detect defects in semiconductor devices. It involves modulating the phase of the second-harmonic signal to improve sensitivity and accuracy in detecting imperfections.
Key Features and Innovation
- Utilizes second-harmonic generation to detect defects in semiconductor devices.
- Modulates the phase of the second-harmonic signal to enhance sensitivity.
- Employs a second-harmonic generation element and an electric optical crystal for phase modulation.
- Measures the second-harmonic signal to determine the presence of defects in the semiconductor device.
Potential Applications
This technology can be used in the semiconductor industry for quality control and defect detection in manufacturing processes. It can also be applied in research and development to analyze the properties of semiconductor materials.
Problems Solved
- Improves sensitivity in detecting defects in semiconductor devices.
- Enhances accuracy in identifying imperfections within semiconductor materials.
- Provides a non-destructive testing method for semiconductor inspection.
Benefits
- Increased precision in defect detection.
- Faster and more efficient semiconductor inspection process.
- Non-destructive testing method for semiconductor devices.
Commercial Applications
Title: Advanced Semiconductor Inspection Technology for Quality Control This technology can be utilized by semiconductor manufacturers to improve the quality control process and ensure the reliability of semiconductor devices. It can also be integrated into semiconductor research facilities for material analysis and characterization.
Prior Art
The patent application builds upon existing techniques of second-harmonic generation for defect detection in semiconductor devices. It introduces a novel method of phase modulation to enhance sensitivity and accuracy in semiconductor inspection.
Frequently Updated Research
There is ongoing research in the field of semiconductor inspection using second-harmonic generation to further optimize defect detection methods and improve the efficiency of semiconductor manufacturing processes.
Questions about Semiconductor Inspection Technology
Question 1
How does the modulation of the second-harmonic signal improve defect detection in semiconductor devices? The modulation of the second-harmonic signal enhances sensitivity and accuracy in detecting imperfections within semiconductor materials, allowing for more precise defect identification.
Question 2
What are the potential implications of this technology for the semiconductor industry? This technology has the potential to revolutionize semiconductor inspection processes by providing a more efficient and reliable method for defect detection, ultimately improving the quality and reliability of semiconductor devices.
Original Abstract Submitted
In semiconductor inspection using second-harmonic generation within an object, a weak second-harmonic is detected at high sensitivity. In a semiconductor inspecting apparatus which irradiates a pulsed laser with a very short pulse width to a surface of a semiconductor device as the object, and measures the second-harmonic generated within the semiconductor device, a second-harmonic generation element is disposed between a light source and the object to generate a first second-harmonic. Further, the apparatus modulates a phase of only the first second-harmonic using an electric optical crystal, and then, a fundamental wave is irradiated onto the object. When the fundamental wave is irradiated onto the semiconductor device, the second-harmonic is generated therefrom. The first second-harmonic interferes with the second second-harmonic on a detector, and an intensity of the light obtained by the interfering is modulated at the same period as that of the phase modulation of the first second-harmonic. An amplitude of the second second-harmonic may be obtained from a modulated amplitude thereof, and a phase of the second second-harmonic may be measured from a modulated phase thereof.
