18384766. THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS USING THE SAME simplified abstract (LG Display Co., Ltd.)
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS USING THE SAME
Organization Name
Inventor(s)
JuHeyuck Baeck of Gyeonggi-do (KR)
Dohyung Lee of Gyeonggi-do (KR)
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18384766 titled 'THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS USING THE SAME
Simplified Explanation:
The patent application describes a thin film transistor substrate with a unique structure involving two active layers, one crystalline and one amorphous, separated by a gate insulating film.
Key Features and Innovation:
- Thin film transistor substrate with a gate electrode and two active layers.
- First active layer closer to the gate electrode, made of crystalline oxide semiconductor material.
- Second active layer further away, made of amorphous oxide semiconductor material.
- Gate insulating film between the first active layer and the gate electrode.
- Contact between the first active layer and the gate insulating film.
Potential Applications: This technology could be used in:
- Display panels
- Touchscreen devices
- Electronic circuits
Problems Solved:
- Improved performance and efficiency of thin film transistors.
- Enhanced stability and reliability of electronic devices.
Benefits:
- Higher resolution displays.
- Faster response times in touchscreens.
- Longer lifespan of electronic components.
Commercial Applications: Potential commercial applications include:
- Consumer electronics manufacturing
- Display technology companies
- Semiconductor industry suppliers
Prior Art: Prior art related to this technology may include research on thin film transistors, oxide semiconductor materials, and display technologies.
Frequently Updated Research: Researchers may be studying:
- New methods for fabricating thin film transistor substrates.
- Performance enhancements of oxide semiconductor materials in electronic devices.
Questions about Thin Film Transistor Substrates: 1. What are the key differences between crystalline and amorphous oxide semiconductor materials? 2. How does the gate insulating film impact the performance of the thin film transistor substrate?
Original Abstract Submitted
A thin film transistor substrate includes a substrate; and a gate electrode and an active layer spaced up and down on the substrate, wherein the active layer includes a first active layer and a second active layer, the first active layer is disposed closer to the gate electrode than the second active layer, a gate insulating film is additionally disposed between the first active layer and the gate electrode, the first active layer and the gate insulating film are in contact with each other, and, the first active layer includes a crystalline oxide semiconductor material, and the second active layer includes an amorphous oxide semiconductor material.
