18384404. MAGNETORESISTIVE RANDOM ACCESS DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 MAGNETORESISTIVE RANDOM ACCESS DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MAGNETORESISTIVE RANDOM ACCESS DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MAGNETORESISTIVE RANDOM ACCESS DEVICE
Organization Name
Inventor(s)
Hyungjong Jeong of Suwon-si (KR)
Byoungjae Bae of Suwon-si (KR)
MAGNETORESISTIVE RANDOM ACCESS DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18384404 titled 'MAGNETORESISTIVE RANDOM ACCESS DEVICE
Simplified Explanation
The magnetoresistive random access memory device described in the abstract includes a substrate, conductive patterns, an insulating interlayer, lower electrode contact, lower electrode, and memory structure with a stacked MTJ structure and upper electrode. The lower electrode has a rounded sidewall, and the memory structure has a sidewall slope increasing in width from top to bottom. Additionally, at least a portion of the lower electrode sidewall is covered by the insulating interlayer.
- Lower electrode with rounded sidewall
- Memory structure with stacked MTJ structure and upper electrode
- Sidewall slope of memory structure increasing in width from top to bottom
- Insulating interlayer covering portion of lower electrode sidewall
Potential Applications
The technology can be used in various electronic devices requiring non-volatile memory, such as computers, smartphones, and IoT devices.
Problems Solved
This technology solves the problem of data loss in electronic devices by providing a reliable and efficient non-volatile memory solution.
Benefits
The benefits of this technology include faster data access, lower power consumption, and increased data storage capacity in electronic devices.
Potential Commercial Applications
- "Non-Volatile Memory Technology for Enhanced Data Storage in Electronic Devices"
Possible Prior Art
One possible prior art for this technology could be the development of other types of non-volatile memory devices with similar structures and functionalities.
What is the manufacturing process for this technology?
The manufacturing process for this technology involves creating conductive patterns on a substrate, covering them with an insulating interlayer, and then adding the lower electrode contact, lower electrode, and memory structure with a stacked MTJ structure and upper electrode.
How does this technology compare to existing non-volatile memory solutions?
This technology offers advantages such as a rounded sidewall on the lower electrode, a memory structure with a sidewall slope increasing in width, and improved reliability and efficiency in data storage compared to existing non-volatile memory solutions.
Original Abstract Submitted
A magnetoresistive random access memory device includes a substrate; conductive patterns on the substrate; an insulating interlayer covering the conductive patterns; a lower electrode contact passing through the insulating interlayer, the lower electrode contact contacting the conductive pattern; a lower electrode on the lower electrode contact, the lower electrode including a rounded sidewall; and a memory structure on the lower electrode, the memory structure including a stacked MTJ structure and upper electrode, wherein a width of the lower electrode increases from a lower portion to an upper portion, the memory structure has a sidewall slope such that a width of the memory structure increases from an upper portion to a lower portion, and at least a portion of a sidewall of the lower electrode is covered by the first insulating interlayer.
