18383201. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
JAE HYUN Choi of Suwon-si (KR)
Hyun Seung Choi of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18383201 titled 'SEMICONDUCTOR MEMORY DEVICE
The abstract describes a semiconductor memory device with a unique structure involving gate trenches, word lines, and a device isolation layer with varying depths and dielectric constants.
- Semiconductor memory device with gate trenches and word lines.
- Device isolation layer in the trenches with different depths and dielectric constants.
- Gate trenches crossing active regions and device isolation layer.
- First trench sections in active regions, second trench sections in device isolation layer.
- Device isolation layer with lower dielectric constant in lower portion.
Potential Applications: - Memory devices in electronic devices. - High-speed data storage applications. - Integrated circuits requiring efficient memory management.
Problems Solved: - Efficient memory storage in limited space. - Improved data retrieval speed. - Enhanced overall performance of semiconductor devices.
Benefits: - Increased memory capacity. - Faster data access. - Improved reliability and longevity of memory devices.
Commercial Applications: Title: "Innovative Semiconductor Memory Device for Enhanced Data Storage" This technology can be applied in: - Consumer electronics like smartphones and tablets. - Computer systems and servers. - Automotive electronics for data processing.
Prior Art: Further research can be conducted in semiconductor memory devices with unique trench structures and dielectric materials to explore prior art in this field.
Frequently Updated Research: Stay updated on advancements in semiconductor memory devices, particularly in the integration of gate trenches and device isolation layers for improved performance.
Questions about Semiconductor Memory Devices: 1. How does the depth of the gate trenches impact the performance of the memory device? 2. What are the potential challenges in manufacturing semiconductor memory devices with varying dielectric constants in the device isolation layer?
Original Abstract Submitted
A semiconductor memory device is provided. The semiconductor device may include a semiconductor substrate having a device isolation trench defining active regions, a device isolation layer disposed in the device isolation trench, gate trenches extending in a first direction and crossing the active regions of the semiconductor substrate and the device isolation layer, word lines disposed in the gate trenches, respectively, each of the gate trenches may include first trench sections in the active regions and second trench sections in the device isolation layer, the first trench sections may have a first depth, and the second trench section may have a second depth greater than the first depth, the device isolation layer may include a lower portion positioned at a level lower than bottom surfaces of the first trench sections and an upper portion on the lower portion, and the lower portion may be formed of a dielectric material having a lower dielectric constant than that of the upper portion.
