18383182. MULTILAYER INNER SPACER FOR GATE-ALL-AROUND DEVICE simplified abstract (Applied Materials, Inc.)

MULTILAYER INNER SPACER FOR GATE-ALL-AROUND DEVICE

Organization Name

Applied Materials, Inc.

Inventor(s)

Sai Hooi Yeong of Cupertino CA (US)

Liu Jiang of Dublin CA (US)

Susmit Singha Roy of Campbell CA (US)

Abhijit Basu Mallick of Sunnyvale CA (US)

El Mehdi Bazizi of San Jose CA (US)

Benjamin Colombeau of San Jose CA (US)

MULTILAYER INNER SPACER FOR GATE-ALL-AROUND DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18383182 titled 'MULTILAYER INNER SPACER FOR GATE-ALL-AROUND DEVICE

Simplified Explanation

The patent application describes semiconductor devices, process tools, and methods for manufacturing gate-all-around (GAA) devices, as well as multilayer inner spacers for GAA devices. The multilayer inner spacer consists of an inner layer, a middle layer, and an outer layer in a superlattice structure on a substrate.

• Gate-all-around (GAA) devices
• Multilayer inner spacers
• Superlattice structure
• Semiconductor material layers
• Channel layers

Key Features and Innovation

• Semiconductor devices such as GAA devices
• Process tools for manufacturing GAA devices
• Methods for manufacturing GAA devices
• Multilayer inner spacers with superlattice structure
• Alternating semiconductor material layers and channel layers

Potential Applications

The technology can be applied in the manufacturing of advanced semiconductor devices with improved performance and efficiency.

Problems Solved

The technology addresses the need for more advanced and efficient semiconductor devices with multilayer inner spacers.

Benefits

• Enhanced performance of semiconductor devices
• Improved efficiency in manufacturing processes
• Potential for higher integration density

Commercial Applications

Title: Advanced Semiconductor Manufacturing Technology This technology can be used in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.

Prior Art

Readers can explore prior research on GAA devices, semiconductor manufacturing processes, and superlattice structures in semiconductor technology.

Frequently Updated Research

Researchers are continually exploring new methods and materials for enhancing semiconductor device performance and efficiency.

Questions about Semiconductor Devices

What are the potential benefits of using multilayer inner spacers in semiconductor devices?

Using multilayer inner spacers can improve device performance, efficiency, and integration density.

How does the superlattice structure in the multilayer inner spacer contribute to the functionality of semiconductor devices?

The superlattice structure enhances the properties of the semiconductor material layers and channel layers, leading to improved device performance.

Original Abstract Submitted

Semiconductor devices (e.g., gate-all-around (GAA) devices), process tools for manufacturing GAA devices and methods of manufacturing GAA devices and multilayer inner spacers for GAA devices are described. The multilayer inner spacer comprises an inner layer, a middle layer, and an outer layer within a superlattice structure formed on a top surface of a substrate. The superlattice structure has a plurality of semiconductor material layers (e.g., silicon germanium (SiGe)) and a corresponding plurality of channel layers (e.g., silicon (Si)) alternatingly arranged in a plurality of stacked pairs. In some embodiments, the methods are performed in situ in an integrated deposition and etch processing system.