18382977. PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY simplified abstract (Applied Materials, Inc.)
Contents
PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
Organization Name
Inventor(s)
Peter J. Guercio of Queen Creek AZ (US)
Paul Westphal of Scottsdale AZ (US)
Kirk Allen Fisher of Tempe AZ (US)
PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18382977 titled 'PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
Simplified Explanation
The present invention describes a new process for manufacturing a silicon carbide (SiC) coated body using dimethyldichlorosilane (DMS) in a chemical vapor deposition method on a graphite substrate. The resulting silicon carbide coated body can be used for high temperature applications, susceptors and reactors, semiconductor materials, and wafer manufacturing.
- Explanation of the patent/innovation:
- New process for depositing SiC on a graphite substrate using DMS in a chemical vapor deposition method - Resulting SiC coated body can be used for high temperature applications, semiconductor materials, and wafer manufacturing
- Potential applications of this technology:
- High temperature applications - Semiconductor materials - Wafer manufacturing
- Problems solved by this technology:
- Improved thermal stability and resistance to high temperatures - Enhanced performance in semiconductor applications - Increased durability in wafer manufacturing processes
- Benefits of this technology:
- Improved performance in high temperature environments - Enhanced durability and stability in semiconductor applications - Increased efficiency in wafer manufacturing processes
- Potential commercial applications of this technology:
- Manufacturing of high temperature resistant components - Semiconductor industry for improved performance - Wafer manufacturing for increased efficiency
- Possible prior art:
- Previous methods of SiC coating using different silane sources - Traditional graphite substrate coating processes
Questions: 1. How does the use of DMS in the chemical vapor deposition method improve the quality of the SiC coating compared to other methods? 2. What specific high temperature applications can benefit the most from the use of the silicon carbide coated body described in this patent application?
Original Abstract Submitted
The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.
