18382546. SEMICONDUCTOR DEVICE HAVING THROUGH-VIA STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE HAVING THROUGH-VIA STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE HAVING THROUGH-VIA STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE HAVING THROUGH-VIA STRUCTURE
Organization Name
Inventor(s)
Shaofeng Ding of Suwon-si (KR)
Jeonghoon Ahn of Suwon-si (KR)
SEMICONDUCTOR DEVICE HAVING THROUGH-VIA STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18382546 titled 'SEMICONDUCTOR DEVICE HAVING THROUGH-VIA STRUCTURE
Simplified Explanation
The semiconductor device described in the abstract includes a semiconductor substrate, an integrated circuit layer, multiple metal wiring layers, wiring vias, and through-vias. The through-vias penetrate the semiconductor substrate and are connected to capping-type via connection pads on the metal wiring layers.
- The semiconductor device has a semiconductor substrate as its base.
- An integrated circuit layer is placed on the semiconductor substrate.
- Multiple metal wiring layers are sequentially arranged on the substrate and the integrated circuit layer.
- Wiring vias connect the metal wiring layers to each other.
- Through-vias extend vertically from via connection pads on the metal wiring layers, penetrating the semiconductor substrate.
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry
Problems Solved
This technology helps in solving the following problems:
- Efficient vertical connections in semiconductor devices
- Enhanced performance and reliability of integrated circuits
- Improved signal transmission between different metal wiring layers
Benefits
The benefits of this technology include:
- Increased functionality of semiconductor devices
- Higher integration density on a chip
- Enhanced electrical connectivity within the device
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Telecommunications equipment
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be the use of through-silicon vias (TSVs) in semiconductor devices to enable vertical connections between different layers.
Unanswered Questions
How does this technology impact the overall performance of semiconductor devices?
This article does not delve into the specific performance improvements or changes brought about by the described technology. Further research or testing may be needed to understand the full extent of its impact.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing?
The article does not address the potential challenges or limitations that may arise when scaling up the implementation of this technology. Factors such as cost, complexity, and compatibility with existing processes could be important considerations in large-scale adoption.
Original Abstract Submitted
A semiconductor device includes: a semiconductor substrate; an integrated circuit layer disposed on the semiconductor substrate; a first metal wiring layer to an n-th metal wiring layer sequentially disposed on the semiconductor substrate and the integrated circuit layer, wherein n is a positive integer; a plurality of wiring vias connecting the first to n-th metal wiring layers to each other, and a through-via extending in a vertical direction from a via connection pad, which is any one of the first metal wiring layer to the n-th metal wiring layer, toward the semiconductor substrate and penetrating the semiconductor substrate, wherein the via connection pad is a capping-type via connection pad formed on an upper surface of the through-via.
