18381115. MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE
Organization Name
Inventor(s)
SEUNG-JUN Lee of Suwon-si (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18381115 titled 'MEMORY DEVICE
Simplified Explanation
The memory device described in the abstract includes a memory cell array, column selection lines, sense amplifiers, control logic circuit, and a column decoder.
- Memory cell array with word lines and bit lines
- Column selection lines divided into first and second parts
- Bit line sense amplifiers for data sensing
- Local sense amplifiers for outputting sensed data
- Control logic circuit for generating row and column address signals
- Column decoder for activating column selection lines
Potential Applications
This memory device technology could be applied in:
- Computer systems
- Mobile devices
- Automotive electronics
Problems Solved
This technology helps in:
- Increasing memory storage capacity
- Improving data retrieval speed
- Enhancing overall system performance
Benefits
The benefits of this technology include:
- Efficient data storage and retrieval
- Faster processing speeds
- Enhanced system reliability
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Data centers
- Consumer electronics
- Industrial automation systems
Possible Prior Art
One possible prior art for this technology could be the use of similar memory cell arrays in previous memory devices.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
The article does not provide a direct comparison with existing memory devices in terms of speed and efficiency. Further research or testing may be needed to determine the exact performance differences.
Are there any limitations or drawbacks to this memory device technology?
The article does not mention any limitations or drawbacks of this memory device technology. Additional analysis or user feedback may be necessary to identify any potential limitations.
Original Abstract Submitted
A memory device includes a memory cell array which includes a plurality of word lines and a plurality of bit lines; a plurality of column selection lines which extends over the memory cell array and includes a first part of the memory cell array and a second part connected to the first part; a plurality of bit line sense amplifiers each connected to a bit line and configured to sense data stored in a memory cell; a plurality of local sense amplifiers each configured to output the sensed data from one of the bit line sense amplifiers through a column selection transistor connected to a local column selection line; a control logic circuit which generates a row address signal indicating an activation word line and a column address signal indicating an activation bit line; and a column decoder which activates a column selection line based on the column address signal.
