18380422. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seongsoo Moon of Suwon-si (KR)
SEUNGHAK Park of Suwon-si (KR)
METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18380422 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE
The method described in the patent application involves the fabrication of a semiconductor device by stacking interlayer insulating layers and sacrificial layers to form a mold structure, creating a dummy hole, forming a dummy sacrificial pillar in the dummy hole, and then forming a second mold structure on top.
- Stacking of first interlayer insulating layers and sacrificial layers to form a mold structure
- Creation of a dummy hole penetrating the mold structure
- Formation of a dummy sacrificial pillar in the dummy hole
- Formation of a second mold structure with a uniform thickness on the first mold structure
- Top surface of the second mold structure having a recessed key region corresponding to the first recessed key region
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Integrated circuit fabrication
Problems Solved: - Improved fabrication process for semiconductor devices - Enhanced structural integrity of the device
Benefits: - Higher quality semiconductor devices - Increased efficiency in manufacturing processes - Enhanced performance of integrated circuits
Commercial Applications: Title: Advanced Semiconductor Device Fabrication Method This technology can be utilized in the production of various semiconductor devices, leading to improved performance and reliability in electronic products. The market implications include increased demand for high-quality semiconductor components in industries such as telecommunications, consumer electronics, and automotive.
Questions about Semiconductor Device Fabrication Method: 1. How does the fabrication process described in the patent application differ from traditional methods? The fabrication process in the patent application involves the formation of a dummy sacrificial pillar in a dummy hole, which enhances the structural integrity of the semiconductor device.
2. What are the key advantages of using a second mold structure with a uniform thickness in semiconductor device fabrication? The use of a second mold structure with a uniform thickness ensures consistency in the device's structure and improves overall performance.
Original Abstract Submitted
A method of fabricating a semiconductor device including: alternately stacking first interlayer insulating layers and first sacrificial layers on a substrate to form a first mold structure; forming a dummy hole penetrating the first mold structure; forming a dummy sacrificial pillar in the dummy hole, wherein the formation of the dummy sacrificial pillar includes forming a first recessed key region to expose a portion of an inner side surface of the dummy hole; and forming a second mold structure with a substantially uniform thickness on the first recessed key region and the first mold structure, wherein a top surface of the second mold structure has a second recessed key region corresponding to the first recessed key region.
