18379106. EUV PHOTORESIST AND UNDERLAYER ADHESION MODULATION simplified abstract (Applied Materials, Inc.)
Contents
EUV PHOTORESIST AND UNDERLAYER ADHESION MODULATION
Organization Name
Inventor(s)
Zhiyu Huang of Sunnyvale CA (US)
BOCHENG Cao of Santa Clara CA (US)
YUNG-CHEN Lin of Gardena CA (US)
CHI-I Lang of CUPERTINO CA (US)
EUV PHOTORESIST AND UNDERLAYER ADHESION MODULATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18379106 titled 'EUV PHOTORESIST AND UNDERLAYER ADHESION MODULATION
Simplified Explanation: The patent application describes a method for developing a patterning stack, involving treating an underlayer to improve adhesion with photoresist and scum removal.
Key Features and Innovation:
- Method involves providing a patterning stack with an underlayer and photoresist.
- Treatment of underlayer to enhance adhesion with scum.
- Removal of scum from the surface of the underlayer.
Potential Applications: This technology could be applied in the semiconductor industry for advanced lithography processes.
Problems Solved: The method addresses issues related to adhesion between layers in patterning stacks, specifically dealing with scum formation.
Benefits:
- Improved adhesion strength between layers.
- Enhanced precision in patterning processes.
- Reduction of defects in semiconductor manufacturing.
Commercial Applications: Advanced lithography systems in semiconductor manufacturing could benefit from this method, leading to higher quality and more reliable electronic devices.
Prior Art: Prior research in the field of lithography and semiconductor manufacturing may provide insights into similar methods for improving adhesion between layers.
Frequently Updated Research: Stay updated on the latest advancements in lithography techniques and materials to enhance the performance of patterning stacks.
Questions about Patterning Stack Development: 1. How does the treatment of the underlayer impact the adhesion strength with the photoresist? 2. What are the potential challenges in implementing this method in large-scale semiconductor production?
Original Abstract Submitted
Embodiments disclosed herein include a method of developing a patterning stack. In an embodiment, the method comprises providing a patterning stack, where the patterning stack comprises an underlayer and a photoresist over the underlayer, and where the underlayer has a first adhesion strength with the photoresist. The method may further comprise exposing and developing the photoresist with electromagnetic radiation and a developer, where scum remains on a surface of the underlayer. In an embodiment, the method further comprises treating the underlayer so that the underlayer has a second adhesion strength with the scum, and removing the scum.
