18378541. THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME simplified abstract (LG DISPLAY CO., LTD.)
Contents
THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME
Organization Name
Inventor(s)
THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18378541 titled 'THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME
Simplified Explanation:
This patent application describes a thin film transistor with specific structural features, including an active layer, gate electrode, source electrode, and drain electrode. The active layer contains a crystalline structure and connection portions with amorphous portions.
- The thin film transistor includes an active layer, gate electrode, source electrode, and drain electrode.
- The active layer has a channel overlapping with the gate electrode and connection portions on each side of the channel.
- The channel has a crystalline structure, while the connection portions have amorphous portions contacting the channel.
Key Features and Innovation:
- Thin film transistor structure with specific components and connections.
- Active layer with a crystalline channel and amorphous connection portions.
- Optimization for efficient electronic performance.
Potential Applications:
- Display technologies.
- Integrated circuits.
- Sensor devices.
Problems Solved:
- Enhancing transistor performance.
- Improving electronic device efficiency.
- Facilitating advanced electronic applications.
Benefits:
- Higher performance levels.
- Increased device reliability.
- Enhanced functionality in electronic devices.
Commercial Applications:
- Display manufacturing industry.
- Semiconductor technology sector.
- Consumer electronics market.
Prior Art:
Prior art related to thin film transistors and semiconductor device structures.
Frequently Updated Research:
Ongoing research on thin film transistor technology and semiconductor materials.
Questions about Thin Film Transistors:
1. What are the key components of a thin film transistor? 2. How does the crystalline structure of the channel impact transistor performance?
Original Abstract Submitted
A thin film transistor can include an active layer; a gate electrode at least partially overlapping with the active layer; and a source electrode and a drain electrode spaced apart from each other and connected to the active layer, respectively. Also, the active layer includes a channel overlapping with the gate electrode; a first connection portion connected to a first side of the channel portion; and a second connection portion connected to a second side of the channel portion. Also, the channel has a crystalline structure, the first connection portion includes a first amorphous portion contacting the channel, and the second connection portion includes a second amorphous portion contacting the channel.
