18374717. OPERATING METHOD OF A NONVOLATILE MEMORY DEVICE FOR PROGRAMMING MULTI-PAGE DATA simplified abstract (Samsung Electronics Co., Ltd.)
OPERATING METHOD OF A NONVOLATILE MEMORY DEVICE FOR PROGRAMMING MULTI-PAGE DATA
Organization Name
Inventor(s)
Wandong Kim of Siheung-si (KR)
Sangwan Nam of Hwaseong-si (KR)
OPERATING METHOD OF A NONVOLATILE MEMORY DEVICE FOR PROGRAMMING MULTI-PAGE DATA - A simplified explanation of the abstract
This abstract first appeared for US patent application 18374717 titled 'OPERATING METHOD OF A NONVOLATILE MEMORY DEVICE FOR PROGRAMMING MULTI-PAGE DATA
Simplified Explanation
The operating method of a nonvolatile memory device for programming multi-page data includes the following steps:
- Receiving the multi-page data from a memory controller.
- Programming the first page data to first memory cells connected to a word line adjacent to a selected word line.
- Reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data.
- Calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value.
- Programming the previous page data read from the second memory cells and second page data to the second memory cells based on the first fail bit number.
Potential applications of this technology:
- Nonvolatile memory devices, such as flash memory, can benefit from this operating method.
- This method can be used in various electronic devices that utilize nonvolatile memory, such as smartphones, tablets, and laptops.
Problems solved by this technology:
- This operating method improves the programming efficiency of multi-page data in nonvolatile memory devices.
- It reduces the number of programming cycles required for programming multi-page data, leading to faster and more efficient data storage.
Benefits of this technology:
- Faster programming of multi-page data improves the overall performance of nonvolatile memory devices.
- Reduced programming cycles increase the lifespan of the memory cells, enhancing the durability and reliability of the memory device.
- Improved programming efficiency allows for more efficient use of memory space, optimizing the storage capacity of the nonvolatile memory device.
Original Abstract Submitted
An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.
