18374392. MEMORY DEVICE INCLUDING STACKED PASS TRANSISTORS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
MEMORY DEVICE INCLUDING STACKED PASS TRANSISTORS
Organization Name
Inventor(s)
MEMORY DEVICE INCLUDING STACKED PASS TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18374392 titled 'MEMORY DEVICE INCLUDING STACKED PASS TRANSISTORS
The memory device described in the abstract consists of a memory block with multiple wordlines stacked vertically and extending horizontally, and a pass transistor block with multiple pass transistors stacked vertically to transmit driving signals to the wordlines.
- Each pass transistor in the pass transistor block has a body region with upper and lower surfaces, side surfaces facing horizontally, and front and rear surfaces facing in another horizontal direction.
- The pass transistor includes a first source-drain electrode on one side surface to receive a driving signal, a second source-drain electrode on the other side surface connected to a wordline, and a first vertical gate electrode on a surface facing the front or rear.
Key Features and Innovation:
- Memory block with vertically stacked wordlines and horizontally extending pass transistors.
- Pass transistors transmit driving signals to wordlines efficiently.
- Pass transistor design with specific electrode placements for effective signal transmission.
Potential Applications:
- Memory devices in electronic devices.
- Data storage systems.
- Integrated circuits.
Problems Solved:
- Efficient transmission of driving signals in memory devices.
- Optimization of memory block design for improved performance.
Benefits:
- Enhanced memory device functionality.
- Increased data storage capacity.
- Improved overall performance of electronic devices.
Commercial Applications:
- Memory chip manufacturing industry.
- Consumer electronics market.
- Data storage solutions providers.
Questions about Memory Devices: 1. How does the vertical stacking of wordlines improve memory device performance? 2. What are the advantages of using pass transistors in memory blocks?
Frequently Updated Research: Ongoing research on memory device design and optimization for increased efficiency and performance.
Original Abstract Submitted
A memory device including a memory block including a plurality of wordlines stacked in a vertical direction and extending in a first horizontal direction; and a pass transistor block including a plurality of pass transistors stacked in the vertical direction, wherein the plurality of pass transistors are configured to transmit a plurality of driving signals respectively to the plurality of wordlines, wherein each pass transistor of the plurality of pass transistors includes: a body region having an upper surface and a lower surface which face in the vertical direction, a first side surface and a second side surface which face in the first horizontal direction, and a front surface and a rear surface which face in a second horizontal direction; a first source-drain electrode on the first side surface, and configured to receive a corresponding driving signal of the plurality of driving signals; a second source-drain electrode on the second side surface, wherein the second source-drain electrode is electrically connected to a side surface of a corresponding wordline of the plurality of wordlines; and a first vertical gate electrode on a first surface from among the front surface and the rear surface.
