18373392. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18373392 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The abstract describes a semiconductor device that includes multiple layers and patterns for wiring and insulation. The device has a substrate, an insulating layer, a trench, a contact plug, wiring patterns, and additional insulating layers. There is also an air gap formed within the trench.
- The semiconductor device includes a substrate, insulating layers, and wiring patterns.
- A trench is formed within the insulating layer, and a contact plug is placed inside the trench.
- Wiring patterns are disposed on the contact plug and the insulating layer.
- Additional insulating layers surround the side walls of the wiring patterns.
- An air gap is formed within the trench on the contact plug.
Potential Applications:
- This semiconductor device can be used in various electronic devices, such as smartphones, computers, and other integrated circuits.
- It can be utilized in the manufacturing of microprocessors, memory chips, and other semiconductor components.
Problems Solved:
- The device solves the problem of efficiently connecting different layers and patterns in a semiconductor device.
- It addresses the need for proper insulation and protection of wiring patterns.
- The air gap within the trench helps in reducing interference and improving signal integrity.
Benefits:
- The device allows for compact and efficient integration of multiple layers and patterns.
- It provides improved insulation and protection for the wiring patterns.
- The air gap helps in reducing crosstalk and improving overall performance and reliability of the semiconductor device.
Original Abstract Submitted
A semiconductor device includes a substrate, a first interlayer insulating layer disposed on the substrate, a first trench formed inside the first interlayer insulating layer, a contact plug disposed inside the first trench, a first wiring pattern disposed on the contact plug, a second wiring pattern which is disposed on the first interlayer insulating layer and spaced apart from the first wiring pattern in a horizontal direction, a second interlayer insulating layer which is disposed on the first interlayer insulating layer and surrounds each of side walls of the first wiring pattern and each of side walls of the second wiring pattern, and a first air gap formed on the contact plug inside the first trench.
