18373353. IMAGE SENSOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18373353 titled 'IMAGE SENSOR
Simplified Explanation
The patent application describes an image sensor with a unique wiring structure that connects the photoelectric conversion element to the gate electrodes and impurity regions in a novel way.
- The image sensor includes a first substrate with a photoelectric conversion element and a floating diffusion region.
- A first wiring structure on the first side of the first substrate connects the floating diffusion region to the impurity region in the second substrate.
- The second substrate has gate electrodes and impurity regions on its third and fourth sides, respectively.
- The second wiring structure on the third side of the second substrate connects the impurity region to the floating diffusion region through the first wiring structure.
Potential Applications
This technology could be used in digital cameras, smartphones, and other devices that require high-quality image sensors for capturing photos and videos.
Problems Solved
This innovation solves the problem of efficiently connecting the photoelectric conversion element to the gate electrodes and impurity regions in an image sensor, improving overall performance and image quality.
Benefits
The benefits of this technology include enhanced image sensor performance, improved image quality, and potentially lower production costs due to the simplified wiring structure.
Potential Commercial Applications
The potential commercial applications of this technology include digital camera manufacturers, smartphone companies, and other electronics manufacturers looking to incorporate high-quality image sensors into their products.
Possible Prior Art
One possible prior art for this technology could be the use of similar wiring structures in other types of semiconductor devices, such as memory chips or processors.
Unanswered Questions
How does this technology compare to existing image sensor designs on the market?
This article does not provide a direct comparison to existing image sensor designs, so it is unclear how this technology stacks up against current industry standards.
What specific improvements in image quality can be attributed to this new wiring structure?
The article does not delve into the specific improvements in image quality that can be achieved with this new wiring structure, leaving this question unanswered.
Original Abstract Submitted
An image sensor includes a first substrate having a photoelectric conversion element. A first gate electrode is on a first side of the first substrate. A floating diffusion region is in the first substrate. A first wiring structure is on the first side and includes a first wiring layer and a first bonding pad. A second substrate has a third side that includes second and third gate electrodes. An impurity region is in the second substrate. A second wiring structure is on the third side and includes a second wiring layer and a second bonding pad directly contacting the first bonding pad. A fourth gate electrode is on a fourth side of the second substrate. A third wiring structure is on the fourth side and includes a third wiring layer. The floating diffusion region is connected to the impurity region through the first wiring structure and the second wiring structure.
