18372118. MEMORY DEVICE HAVING LOAD OFFSET MISMATCH COMPENSATION simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 MEMORY DEVICE HAVING LOAD OFFSET MISMATCH COMPENSATION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE HAVING LOAD OFFSET MISMATCH COMPENSATION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE HAVING LOAD OFFSET MISMATCH COMPENSATION
Organization Name
Inventor(s)
YOUNG HUN Seo of SUWON-SI (KR)
MEMORY DEVICE HAVING LOAD OFFSET MISMATCH COMPENSATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18372118 titled 'MEMORY DEVICE HAVING LOAD OFFSET MISMATCH COMPENSATION
Simplified Explanation
The memory device described in the abstract includes a memory cell array with multiple memory cells connected to bit lines and word lines. It also features two bit line sense amplifiers connected to different bit lines through varying lengths of connecting wiring, with compensation loads adjusted to equalize RC loads.
- Memory device with memory cell array, bit lines, word lines, and sense amplifiers
- Two sense amplifiers connected to different bit lines with different lengths of connecting wiring
- Compensation loads adjusted to equalize RC loads of the bit lines
Potential Applications
The technology described in this patent application could be applied in:
- Computer memory systems
- Solid-state drives
- Embedded systems
Problems Solved
This technology addresses the following issues:
- Unequal RC loads in memory devices
- Inefficient data retrieval due to varying lengths of connecting wiring
- Inaccurate data sensing caused by unequal compensation loads
Benefits
The benefits of this technology include:
- Improved data retrieval speed
- Enhanced data sensing accuracy
- Increased overall efficiency of memory devices
Potential Commercial Applications
Potential commercial applications of this technology could include:
- Memory chip manufacturing companies
- Electronics manufacturers
- Data storage companies
Possible Prior Art
One possible prior art for this technology could be the use of compensation loads in memory devices to equalize RC loads and improve data retrieval efficiency.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
This article does not provide a direct comparison with existing memory devices in terms of speed and efficiency.
What are the potential limitations or drawbacks of implementing this technology in memory devices?
This article does not discuss any potential limitations or drawbacks of implementing this technology in memory devices.
Original Abstract Submitted
A memory device including a memory cell array which includes a plurality of memory cells connected to each of a plurality of bit lines and word lines, a first bit line sense amplifier electrically connected to a first bit line through a first memory cell and a first connecting wiring and a second bit line sense amplifier electrically connected to a second bit line through a second connecting wiring having a length different from that of the first connecting wiring. A first compensation load of the first bit line and a second compensation load of the second bit line are adjusted to equalize RC loads of the first bit line and the second bit line.
