18371113. Methods For Forming Gate Structures simplified abstract (Applied Materials, Inc.)
Contents
Methods For Forming Gate Structures
Organization Name
Inventor(s)
Nicolas Louis Breil of San Jose CA (US)
Balasubramanian Pranatharthiharan of San Jose CA (US)
Methods For Forming Gate Structures - A simplified explanation of the abstract
This abstract first appeared for US patent application 18371113 titled 'Methods For Forming Gate Structures
The method described in the abstract involves using epitaxial growth to form the layers of a gate structure. This process includes growing silicon germanium layers with varying germanium percentages on a silicon substrate, as well as selectively etching and depositing materials to create the desired structure.
- Epitaxial growth is used to form the layers of the gate structure
- Silicon germanium layers with different germanium percentages are grown on a silicon substrate
- Selective etching and deposition processes are employed to create the desired structure
- Low-k dielectric material is selectively deposited to fill a recess in the structure
- The second silicon germanium layer is selectively oxidized to form a silicon germanium oxide layer
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Nanotechnology research
Problems Solved: - Improving gate structure formation - Enhancing semiconductor device performance - Increasing efficiency in manufacturing processes
Benefits: - Enhanced device performance - Improved manufacturing efficiency - Potential for smaller and more powerful electronic devices
Commercial Applications: Title: Advanced Gate Structure Formation Method for Semiconductor Devices This technology could be utilized in the production of high-performance electronic devices, leading to advancements in the semiconductor industry. The method offers improved gate structure formation, which can result in enhanced device performance and increased efficiency in manufacturing processes.
Questions about the technology: 1. How does epitaxial growth contribute to the formation of the gate structure? Epitaxial growth allows for the precise deposition of layers with specific properties, enabling the creation of complex structures like the gate structure described in the patent application.
2. What are the potential implications of using silicon germanium layers with varying germanium percentages in semiconductor manufacturing? The use of silicon germanium layers with different germanium percentages can impact the performance and characteristics of semiconductor devices, potentially leading to advancements in device technology.
Original Abstract Submitted
A method for forming a gate structure uses epitaxial growth to form the layers of the gate structure. The method includes epitaxially growing a first silicon germanium layer with a first germanium percentage on a silicon substrate, growing a first silicon layer on the first silicon germanium layer, growing a second silicon germanium layer with a second germanium percentage greater than the first germanium percentage, growing a second silicon layer on the second silicon germanium layer, selectively etching a portion of the first silicon germanium layer to form a recess; selectively depositing a low-k dielectric material to fill the recess, and selectively oxidizing the second silicon germanium layer throughout to form a silicon germanium oxide layer.
