18370650. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jae Seung Choi of Suwon-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18370650 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a first die with micro bumps and macro metal pads, a routing wiring layer with routing metals, through silicon vias (TSVs), keep-out zones, and micro metal pads.
- The first die has micro bumps on its upper face and corresponding macro metal pads.
- The routing wiring layer consists of routing metals connected to the macro metal pads.
- TSVs connect the routing metals to the micro metal pads, extending downward from the routing metals.
- Keep-out zones, including a bundle region, are present to ensure proper spacing and isolation.
- The micro metal pads play a crucial role in the overall functionality of the semiconductor device.
Potential Applications: - This technology can be used in various semiconductor devices such as microprocessors, memory chips, and sensors. - It can enhance the performance and reliability of integrated circuits in electronic devices.
Problems Solved: - Improved connectivity and signal transmission within semiconductor devices. - Enhanced integration of different components on a single die.
Benefits: - Higher efficiency and speed in data processing. - Increased durability and longevity of semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be applied in the manufacturing of advanced electronic devices, leading to faster and more reliable products. The market implications include increased demand for high-performance semiconductor components in various industries.
Prior Art: Readers can explore prior research on semiconductor device packaging, micro bump technology, and through silicon vias to gain a deeper understanding of the evolution of this technology.
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further improve the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in micro bump technology and through silicon vias for cutting-edge developments in the field.
Questions about Semiconductor Device Technology: 1. How does the integration of micro bumps and macro metal pads improve the functionality of semiconductor devices? 2. What are the key challenges in implementing through silicon vias in semiconductor devices, and how are they addressed in this technology?
Original Abstract Submitted
A semiconductor device includes a first die including a plurality of first micro bumps on a first upper face of the first die, a plurality of first macro metal pads at positions respectively corresponding to the plurality of first micro bumps, a first routing wiring layer comprising a plurality of first routing metals, where a first end of each of the plurality of first routing metals is respectively under the plurality of first macro metal pads, a plurality of through silicon vias (TSVs), where first ends of the plurality of TSVs are respectively connected to second ends of the plurality of first routing metals, and where each of the plurality of TSVs extends downward from the respective second ends of the plurality of first routing metals, a first plurality of keep-out zones including a first keep-out zone bundle region, and a plurality of first micro metal pads.
