18368446. MEMORY DEVICE AND PRECHARGING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)

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MEMORY DEVICE AND PRECHARGING METHOD THEREOF

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

SEUNGKI Hong of Suwon-si (KR)

MEMORY DEVICE AND PRECHARGING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18368446 titled 'MEMORY DEVICE AND PRECHARGING METHOD THEREOF

Simplified Explanation

The memory device described in the abstract is designed to precharge a decoded row address in response to a predetermined condition being satisfied. This helps improve the efficiency and speed of accessing data in the memory cell array.

  • Memory device includes a memory cell array with multiple rows
  • Row decoder selects a row based on a decoded row address
  • Interface circuit decodes row address and transfers it to row decoder
  • In idle mode, precharges decoded row address based on condition

Potential Applications

This technology could be applied in various memory devices such as RAM, flash memory, and SSDs to enhance their performance and efficiency.

Problems Solved

1. Improved speed and efficiency in accessing data in memory devices 2. Enhanced reliability and stability of memory operations

Benefits

1. Faster data access and retrieval 2. Reduced power consumption 3. Increased overall performance of memory devices

Potential Commercial Applications

Optimizing memory devices for use in computers, smartphones, tablets, and other electronic devices to improve their overall performance and user experience.

Possible Prior Art

One possible prior art could be the use of precharging techniques in memory devices to improve data access speeds and efficiency. This technology builds upon existing methods to further enhance memory operations.

Unanswered Questions

How does this technology compare to existing precharging methods in memory devices?

This article does not provide a direct comparison between this technology and existing precharging methods in memory devices. Further research or analysis would be needed to determine the specific advantages and differences.

What specific conditions trigger the precharging of the decoded row address in the memory device?

The abstract mentions precharging in response to a predetermined condition being satisfied, but does not specify what that condition is. Additional information or details would be required to understand the exact circumstances under which precharging occurs.


Original Abstract Submitted

A memory device and a method of precharging a decoded address are provided. The memory device includes a memory cell array including a plurality of rows; a row decoder configured to select a row to be activated from among the plurality of rows based on a decoded row address; and an interface circuit configured to: generate the decoded row address based on decoding a plurality of bits of a row address, transfer the decoded row address to the row decoder, and in an idle non-power-down mode of the memory device, precharge the decoded row address that is transferred to the row decoder in response to a predetermined condition being satisfied.