18367881. SEMICONDUCTOR DEVICE AND HIGH FREQUENCY SWITCH simplified abstract (Kabushiki Kaisha Toshiba)
Contents
SEMICONDUCTOR DEVICE AND HIGH FREQUENCY SWITCH
Organization Name
Inventor(s)
Kazuya Nishihori of Shibuya Tokyo (JP)
Keita Masuda of Kawasaki Kanagawa (JP)
Takahiro Nakagawa of Kawasaki Kanagawa (JP)
Akihiro Imada of Yokohama Kanagawa (JP)
SEMICONDUCTOR DEVICE AND HIGH FREQUENCY SWITCH - A simplified explanation of the abstract
This abstract first appeared for US patent application 18367881 titled 'SEMICONDUCTOR DEVICE AND HIGH FREQUENCY SWITCH
The semiconductor device described in the abstract includes a semiconductor substrate, a circuit element, a first wiring layer, and an element protection member. The circuit element, which contains at least one switching element, is located on the upper surface of the semiconductor substrate. The first wiring layer consists of multiple first wires that are connected to the circuit element and is positioned above the semiconductor substrate with the help of a first interlayer dielectric film. The element protection member surrounds the circuit element discontinuously with a conductive member that extends along the upper surface of the semiconductor substrate. The first wire insulation film between the first wires in the first wiring layer is made of an oxide insulation film with a dielectric constant of 3.5 or more.
- Circuit element with at least one switching element
- First wiring layer with multiple first wires connected to the circuit element
- Element protection member surrounding the circuit element discontinuously with a conductive member
- First wire insulation film made of an oxide insulation film with a dielectric constant of 3.5 or more
- Semiconductor substrate supporting the circuit element and wiring layers
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit design
Problems Solved: - Protection of circuit elements - Efficient wiring layout - Insulation of wiring layers
Benefits: - Enhanced circuit element protection - Improved wiring efficiency - Higher insulation quality
Commercial Applications: Title: Semiconductor Device with Enhanced Circuit Element Protection This technology can be used in the semiconductor manufacturing industry to improve the efficiency and protection of circuit elements in integrated circuits. It has the potential to enhance the overall performance and reliability of electronic devices.
Questions about Semiconductor Device with Enhanced Circuit Element Protection: 1. How does the element protection member enhance the protection of circuit elements? The element protection member surrounds the circuit element with a conductive member, providing additional protection against external factors. 2. What are the potential applications of this technology beyond semiconductor manufacturing? This technology can also be applied in various electronic devices to improve circuit element protection and wiring efficiency.
Original Abstract Submitted
According to the present embodiment, a semiconductor device includes a semiconductor substrate, a circuit element, a first wiring layer, and an element protection member. The circuit element is formed on an upper surface side of the semiconductor substrate and includes at least one switching element. The first wiring layer includes a plurality of first wires electrically connected to the circuit element and is provided above the semiconductor substrate via a first interlayer dielectric film. The element protection member extends along an upper surface of the semiconductor substrate to discontinuously surround the circuit element with a conductive member. A first wire insulation film between the first wires in the first wiring layer is formed by an oxide insulation film with a dielectric constant of 3.5 or more.
