18366922. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Seung Hyun Lim of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18366922 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The patent application describes an integrated circuit device with two fin-type active regions separated by gate cut insulating pattern.
- The integrated circuit device includes a first fin-type active region and a second fin-type active region.
- Each fin-type active region is adjacent to a device isolation film.
- A first gate line is located on the first fin-type active region, and a second gate line is located on the second fin-type active region.
- A gate cut insulating pattern separates the first and second gate lines.
- The device isolation film includes a first local isolation portion and a second local isolation portion, which separate the first fin-type active region from the second fin-type active region.
Potential Applications
This technology can be applied in the semiconductor industry for the development of advanced integrated circuits with improved performance and efficiency.
Problems Solved
This technology helps in reducing crosstalk and interference between different active regions in an integrated circuit, leading to better overall performance and reliability.
Benefits
- Enhanced performance of integrated circuits - Improved efficiency and reliability - Reduction in crosstalk and interference
Potential Commercial Applications
"Advanced Integrated Circuit Technology for Improved Performance and Efficiency"
Possible Prior Art
No prior art is known at this time.
Unanswered Questions
How does this technology impact power consumption in integrated circuits?
The article does not provide information on the potential effects of this technology on power consumption in integrated circuits.
What are the specific manufacturing processes involved in implementing this technology?
The article does not detail the specific manufacturing processes required to incorporate this technology into integrated circuit production.
Original Abstract Submitted
An integrated circuit device includes a first fin-type active region and a second fin-type active region, a device isolation film adjacent to each of the first and second fin-type active regions, a first gate line on the first fin-type active region, a second gate line on the second fin-type active region, and a gate cut insulating pattern separating the first and second gate lines, wherein the device isolation film includes a first local isolation portion and a second local isolation portion, which are separating the first fin-type active region from the second fin-type active region to be apart from each other with the gate cut insulating pattern therebetween.
