18365483. SEMICONDUCTOR DIODE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
Contents
- 1 SEMICONDUCTOR DIODE STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DIODE STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Diode Structures
- 1.13 Original Abstract Submitted
SEMICONDUCTOR DIODE STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor(s)
Kuo-Ji Chen of Taipei City (TW)
SEMICONDUCTOR DIODE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18365483 titled 'SEMICONDUCTOR DIODE STRUCTURE
Simplified Explanation
The patent application describes a diode structure with specific regions and layers made of silicon.
Key Features and Innovation
- Silicon remaining layer with p-type and n-type doping regions.
- First channel region between the p-type and n-type doping regions.
- Regions are aligned along a first direction.
Potential Applications
This technology could be used in semiconductor devices, integrated circuits, and electronic components.
Problems Solved
The diode structure provides a more efficient and reliable way to control the flow of electrical current.
Benefits
- Improved performance of electronic devices.
- Enhanced control over electrical currents.
- Increased durability and longevity of semiconductor components.
Commercial Applications
This technology has potential applications in the electronics industry for manufacturing advanced semiconductor devices and integrated circuits.
Prior Art
Readers can explore prior patents related to diode structures, silicon doping, and semiconductor device fabrication processes.
Frequently Updated Research
Stay informed about the latest advancements in semiconductor technology and diode structures to understand the evolving landscape of electronic components.
Questions about Diode Structures
What are the key components of a diode structure?
A diode structure typically includes silicon layers, p-type and n-type doping regions, and channel regions for controlling electrical currents.
How does the alignment of regions in a diode structure impact its performance?
The alignment of regions along specific directions in a diode structure can affect the efficiency and functionality of the device.
Original Abstract Submitted
A diode structure includes a silicon remaining layer, a first p-type doping region disposed on the silicon remaining layer and a first n-type doping region disposed on the silicon remaining layer. A first channel region is disposed on the silicon remaining layer and between the p-type doping region and the n-type doping region, wherein the first channel region, the first p-type doping region, and the first n-type doping region are disposed along a first direction.
