18365397. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18365397 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The patent application describes an integrated circuit device with multiple active regions, word line structures buried in the substrate, and a direct contact passing through the active region and word line structure.
- Integrated circuit device with multiple active regions defined in the substrate
- Word line structures buried in the substrate, crossing active regions
- Direct contact partially passing through active region and word line structure
- Direct contact contacting oxide semiconductor channel layer
- Benefits include improved performance and efficiency in integrated circuits
Potential Applications
- Memory devices
- Logic circuits
- Microprocessors
Problems Solved
- Improved performance in integrated circuits
- Enhanced efficiency in data processing
- Increased reliability in semiconductor devices
Benefits
- Higher speed and efficiency in data processing
- Enhanced reliability and durability of integrated circuits
- Improved overall performance of semiconductor devices
Original Abstract Submitted
An integrated circuit device includes a substrate having a plurality of active regions defined therein, a first word line structure including a first word line, a first gate dielectric film surrounding the first word line, and an oxide semiconductor channel layer surrounding the first gate dielectric film, the first word line structure being buried in the substrate, and crossing a first active region of the plurality of active regions, a second word line structure including a second word line and a second gate dielectric film surrounding the second word line, the second word line structure being buried in the substrate and separated from the first word line structure, and crossing the first active region, a direct contact partially passing through the first active region and the first word line structure and contacting the oxide semiconductor channel layer, and a bit line contacting the direct contact.
