18364804. LIGHT RECEIVING ELEMENT AND INFRARED IMAGING DEVICE simplified abstract (Fujitsu Limited)
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LIGHT RECEIVING ELEMENT AND INFRARED IMAGING DEVICE
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LIGHT RECEIVING ELEMENT AND INFRARED IMAGING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18364804 titled 'LIGHT RECEIVING ELEMENT AND INFRARED IMAGING DEVICE
The abstract describes a patent application for a light receiving element that includes a superlattice of an InAs layer and a GaSb layer, with an amorphous layer covering the side wall surface of the light receiving layer. The amorphous layer contains In and As, with smaller amounts of Ga and Sb compared to In and As.
- The light receiving element features a superlattice structure of InAs and GaSb layers.
- An amorphous layer is present on the side wall surface of the light receiving layer.
- The amorphous layer contains In and As, with lower amounts of Ga and Sb.
- This design aims to enhance the performance of the light receiving element.
- The innovation potentially improves the efficiency and sensitivity of light detection.
Potential Applications: - Infrared sensors - Photodetectors - Optical communication devices
Problems Solved: - Enhanced light detection performance - Improved efficiency in light receiving applications
Benefits: - Increased sensitivity to light - Higher efficiency in light detection - Potential for improved performance in various applications
Commercial Applications: Title: Enhanced Light Receiving Element for Improved Performance in Infrared Sensors and Photodetectors This technology could be utilized in industries such as security, aerospace, and telecommunications for enhanced light detection capabilities.
Questions about Light Receiving Element: 1. How does the superlattice structure of InAs and GaSb layers contribute to the performance of the light receiving element? 2. What are the potential implications of the amorphous layer containing lower amounts of Ga and Sb in comparison to In and As?
Original Abstract Submitted
A light receiving element includes a light receiving layer that includes a superlattice of an InAs layer and a GaSb layer, and an amorphous layer that covers a side wall surface of the light receiving layer. The amorphous layer contains In and As, and an amount of Ga and an amount of Sb contained in the amorphous layer are smaller than an amount of In and an amount of As contained in the amorphous layer.
