18363000. NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Hyung Joon Kim of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18363000 titled 'NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation: The patent application describes a non-volatile memory device with specific components and structures.
Key Features and Innovation:
- Substrate, gate electrode layer, electrode pad, channel structure, vertical through contact, and separation insulation pattern.
- Fabrication methods for non-volatile memory devices.
- Inclusion of vertical through contact for improved performance.
- Integration of separation insulation pattern for enhanced functionality.
- Potential for use in electronic systems.
Potential Applications: The technology can be used in various electronic devices requiring non-volatile memory, such as smartphones, tablets, and computers.
Problems Solved: The technology addresses the need for reliable and efficient non-volatile memory storage in electronic devices.
Benefits:
- Improved performance and reliability of non-volatile memory devices.
- Enhanced functionality and durability.
- Potential for smaller form factors in electronic devices.
Commercial Applications: The technology can be applied in the consumer electronics industry for the development of next-generation devices with advanced memory capabilities.
Questions about Non-Volatile Memory Devices: 1. What are the key components of a non-volatile memory device? 2. How does the inclusion of a vertical through contact improve the performance of the device?
Original Abstract Submitted
Non-volatile memory devices, methods for fabricating the same, and/or electronic systems including the same may be provided. A non-volatile memory device may include a substrate, a gate electrode layer, an electrode pad, a channel structure, a vertical through contact, and a separation insulation pattern.
