18361647. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Daimotsu Kato of Kawasaki Kanagawa (JP)

Yosuke Kajiwara of Yokohama Kanagawa (JP)

Hiroshi Ono of Setagaya Tokyo (JP)

Aya Shindome of Yokohama Kanagawa (JP)

Ikuo Fujiwara of Yokohama Kanagawa (JP)

Masahiko Kuraguchi of Yokohama Kanagawa (JP)

Tatsuo Shimizu of Shinagawa Tokyo (JP)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361647 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

The semiconductor device described in the patent application includes various regions and electrodes made of AlGaN with different compositions and concentrations.

• The first semiconductor region contains AlGaN (0≤x1<1).
• The second semiconductor region contains AlGaN (0<x2<1, x1<x2).
• The first nitride region contains AlGaN (0<z1≤1, x2<z1).
• The first nitride region includes a first nitride portion with a first position at its center.
• The third partial region of the first semiconductor region has a lower chlorine concentration at the first position compared to the first face facing the first nitride portion.

Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the field of optoelectronics for creating high-performance light-emitting diodes (LEDs) or laser diodes.

Problems Solved: - The technology addresses the need for improved semiconductor devices with precise control over material compositions and concentrations. - It solves the challenge of optimizing the performance of semiconductor components by adjusting chlorine concentrations in specific regions.

Benefits: - Enhanced performance and efficiency of semiconductor devices. - Greater control and customization of material properties for specific applications.

Commercial Applications: Title: Advanced Semiconductor Devices for Optoelectronics This technology could be commercially applied in the manufacturing of high-quality LEDs, laser diodes, and other optoelectronic devices. The precise control over material compositions and concentrations can lead to improved performance and reliability in various electronic applications.

Questions about the technology: 1. How does the technology impact the efficiency of semiconductor devices? - The technology enhances the efficiency of semiconductor devices by allowing precise control over material compositions and concentrations, leading to improved performance. 2. What potential applications can benefit from the use of this advanced semiconductor technology? - Various applications in optoelectronics, electronics, and semiconductor industries can benefit from the enhanced performance and customization options offered by this technology.

Original Abstract Submitted

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes AlGaN (0≤x1<1). The second semiconductor region including AlGaN (0<x2<1, x1<x2). The first nitride region includes AlGaN (0<z1≤1, x2<z1). The first nitride region includes a first nitride portion. The first nitride portion includes a first position. The first position is a center of the first nitride portion. The third partial region of the first semiconductor region includes a first face facing the first nitride portion. A chlorine concentration at the first position is lower than a chlorine concentration at the first face.