18361361. PHOTORESIST AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

PHOTORESIST AND FORMATION METHOD THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Jui-Hsiung Liu of Taipei City (TW)

Yu-Fang Tseng of New Taipei City (TW)

Pin-Chia Liao of Taoyuan City (TW)

Burn Jeng Lin of Hsinchu City (TW)

Tsai-Sheng Gau of Hsinchu City (TW)

Po-Hsiung Chen of Taichung City (TW)

Po-Wen Chiu of Hsinchu City (TW)

PHOTORESIST AND FORMATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361361 titled 'PHOTORESIST AND FORMATION METHOD THEREOF

Simplified Explanation

The method of manufacturing a semiconductor device described in the abstract involves forming a photoresist layer over a material layer on a substrate, with the photoresist layer containing a solvent and a first photo-active compound dissolved in the solvent.

• The photoresist layer composition includes a first photo-active compound represented by specific chemical formulas.
• The method involves using the photoresist layer for semiconductor device fabrication processes.

Potential Applications

The technology described in the patent application could be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and memory chips.

Problems Solved

This technology helps in improving the precision and efficiency of semiconductor device fabrication processes by utilizing specific photoresist compositions.

Benefits

The use of the described method can lead to enhanced performance and reliability of semiconductor devices, as well as potentially reducing production costs.

Potential Commercial Applications

• "Innovative Semiconductor Device Manufacturing Method for Enhanced Performance"

Possible Prior Art

There may be prior art related to the use of specific photoresist compositions in semiconductor device manufacturing processes.

How does this method compare to existing semiconductor device fabrication techniques?

The article does not provide a direct comparison between this method and other existing techniques in semiconductor device fabrication.

What are the specific characteristics of the first photo-active compound used in the photoresist layer?

The article does not delve into the specific characteristics or properties of the first photo-active compound mentioned in the patent application.

Original Abstract Submitted

A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2):