18361189. THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF simplified abstract (Yangtze Memory Technologies Co., Ltd.)
Contents
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
Organization Name
Yangtze Memory Technologies Co., Ltd.
Inventor(s)
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361189 titled 'THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
The present disclosure introduces a memory device with an alternating layer stack of dielectric and conductive layers, a channel structure, and material layers in different regions.
- Memory device with alternating layer stack of dielectric and conductive layers
- Channel structure extending through the alternating layer stack in a first region
- First material layer on the channel structure
- First dummy channel structure in a second region abutting the first region
- Second material layer on the first dummy channel structure
- Different materials for the first and second material layers
- First material layer spaced apart from the first dummy channel structure in a second direction
Potential Applications: - Advanced memory storage devices - Semiconductor industry for high-performance computing
Problems Solved: - Enhanced memory device performance - Improved data storage capabilities
Benefits: - Increased data storage capacity - Enhanced memory device efficiency
Commercial Applications: Title: Advanced Memory Devices for High-Performance Computing This technology can be utilized in the semiconductor industry to develop cutting-edge memory devices for high-performance computing systems, leading to faster processing speeds and improved data storage capabilities.
Questions about Memory Devices: 1. How does the alternating layer stack improve memory device performance? The alternating layer stack of dielectric and conductive layers enhances the efficiency and data storage capacity of the memory device by providing a stable and reliable structure for data storage.
2. What are the advantages of using different materials for the first and second material layers? Using different materials for the material layers allows for optimized performance and functionality of the memory device, leading to improved data storage capabilities and overall efficiency.
Original Abstract Submitted
The present disclosure provides a memory device. The memory device can include an alternating layer stack comprising dielectric layers and conductive layers stacked in a first direction. The memory device can also include a channel structure extending through the alternating layer stack in a first direction in a first region. A first material layer may be disposed on the channel structure. The memory device can also include a first dummy channel structure extending through the alternating layer stack in the first direction in a second region abutting the first region. A second material layer may be disposed on the first dummy channel structure. The first material layer and the second material layer may be different materials. The first material layer may be spaced apart from the first dummy channel structure in a second direction. The first direction may be perpendicular to the second direction.
